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The junction temperature is limited by the relationship between temperature and life, and the characteristics of the materials composing the transistor. Furthermore, transistors use minority carriers and thus are easily affected by temperature. In particular , if the temperature rises in a reverse-biased collector-base junction, carriers are generated without relation to the signal, the operating point shifts, and in the worst case thermal runaway occurs and the transistor becomes damaged. For this reason, the circuit must be designed so as to prevent the junction temperature from rising. Transistor deterioration occurs quickly when the junction temperature rises.

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