A: HFE is meaning less uunless current is specified. For a switch force gain of 10 for an amplifier at low level maybe 100 for the same transistor.
hie=hic hfe+1=hfc hoe=hoc hre=hrc
the transistor gain is expressed in abrivation hfe. my question is that which are the words the hfe stand for
Gain, in the common emitter amplifier, is beta (hFe) or collector resistance divided by emitter resistance, whichever is less. Substituting a different beta (hFe) transistor will affect gain, if hFe is less, or increase stability and design margin, if hFe is greater.
A darlington pair are two bipolar transistors connected in series in one package the emitter of the first one is connected internal to the base of the second one the two collectors are common, where the second emitter is external, so that the current amplified by the first is amplified further by the second. This gives a high current gain (written β or hFE), and takes less space than two transistors in the same configuration. Integrated packaged devices are available, but it is still common also to use two separate transistors.
Hfe is an empirical value it means nothing unless a load is considered. the meter probably does not provide the proper loading so why measure it?
hie=hic hfe+1=hfc hoe=hoc hre=hrc
HFE is the gain of the transistor
In transistors, current gain plays a significant role. In h parameters, one of the parameters is hfe which is current gain. It is easier if the parameters chosen represent some significant properties of the device. Some other parameters of importance in transistors are input resistance hie and output resistance 1/hoe.So it makes sense to analyse transistors with h parameters.
how to calculate the value of hfc for a given hfe
I don't know about hfc, but hFE is the amplification factor by which the transistor amplifies the base current. Therefore, if hFE is 100, the base current is amplified by a factor of 100.
the transistor gain is expressed in abrivation hfe. my question is that which are the words the hfe stand for
hfe
Gain, in the common emitter amplifier, is beta (hFe) or collector resistance divided by emitter resistance, whichever is less. Substituting a different beta (hFe) transistor will affect gain, if hFe is less, or increase stability and design margin, if hFe is greater.
It depends on which transistor. Typical values of hFe range between 50 and 400. It also depends on the configuration of the circuit, with hFe being a limiting factor, and most designs providing a gain less than hFe.
Two transistors of the same type, {such as two bipolar NPN, or two bipolar PNP, or two enhancement N MOSFET,} which by either manufacture, selection, or both have similar characteristics. The closer the characteristics, the better the match. The most important is input matching, both at 25 degrees C and through the use temperature range. This is perhaps best done by making them together, next to each on a single die. The second most important characteristic for bipolars is Beta (hFE also hfe)), the forward static and dynamic current gain, or for FET's forward transconductance. Breakdown properties are not important as the pair can be rated for the lowest breakdown. Matched transistors are needed for balanced differential stages (normally used for amplifier inputs) and for bridges.
Transistors are typically measured in terms of current (amperes) or voltage (volts) depending on their application. They can also be measured in terms of power (watts) or frequency (hertz). The specific unit associated with a transistor would depend on the parameter being measured, such as current gain (hFE), voltage rating, power dissipation, or frequency response.
The darlington configuration is two transistors connected in such a way that the gain (hFe) of the pair is higher than either transistor taken individually. The two collectors are connected together, and used as the collector of the pair. The base of the first transistor is the base of the pair. The emitter of the first transistor is connected to the base of the second transistor. The emitter of the second transistor is the emitter of the pair. Sometimes there is a resistor between the second base and the second emitter, so as to stabilize the pair in certain conditions. Typically, you multiply hFe's in darlington configuration, so if each transistor had an hFe of, say, 100, then the hFe of the pair would be 10,000.