The darlington configuration is two transistors connected in such a way that the gain (hFe) of the pair is higher than either transistor taken individually. The two collectors are connected together, and used as the collector of the pair. The base of the first transistor is the base of the pair. The emitter of the first transistor is connected to the base of the second transistor. The emitter of the second transistor is the emitter of the pair. Sometimes there is a resistor between the second base and the second emitter, so as to stabilize the pair in certain conditions. Typically, you multiply hFe's in darlington configuration, so if each transistor had an hFe of, say, 100, then the hFe of the pair would be 10,000.
Collector-emitter saturation voltage refers to the voltage drop across the collector-emitter junction of a transistor when the transistor is in saturation mode. It is the minimum voltage required to keep the transistor in saturation, where the transistor is fully turned on and conducting maximum current.
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If inceres the base voltage of transistor them it may be burn . The base volt may be 0.8v to 1.8 If it use as a amplifier
You can consider using the silicon transistor 2N3904 as an equivalent for the AC128. The 2N3904 is a general-purpose NPN transistor commonly used in various amplifier and switching applications. Remember to check datasheets and specifications to ensure compatibility with your circuit requirements.
Transistors are typically composed of three layers of either silicon or germanium semiconductor material: the emitter, the base, and the collector. The junctions between these layers determine the transistor's behavior as an amplifier or a switch. By controlling the flow of electric current between these layers, transistors can amplify or switch electronic signals.
A Darlington transistor it may contain one or more transistor in its case. the purpose is to amplify current by beta multiplication.
A Darlington pair uses two transistors connected to behave as a single transistor with a very high current gain (beta). Transistor-1 has its collector connected to the collector of transistor-2. Transistor-1 has its emitter connected to the base of transistor-2. The base of transistor-1 with the emitter and collector of transistor-2 is used as a single transistor.
A Darlington transistor is a composite transistor. The definition is a combination of two or more transistors that have the purpose of increasing the current gain.
A Darlington pair is two transistors connected to give a very high current gain
higher current handling / heat dissipation This is not really true as those are not singular characteristics of darlingtons. The major characteristics of a darlington is high gain, typically ranging from over 100 to 1000. And since there are essentially two transistors in the case of a darlington and the base of a darlington is connected to the base of the first transistor whose emitter is connected to the base of the second (power or output) transistor, the forward voltage drop from the base to the emitter of the darlington is approximately 2 times the forward voltage drop of a single transistor. it is a beta multiplier therefore it has higher emitter current capability and it not a hi gain per say just higher current capability as opposed to a regular transistor. usage is for an emitter follower which has no voltgage gain at all.
I also don't know..plz....help me...
TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127
A transistor is mainly composed of silicon and germanium
it is a combination of two transistors connected in series. the emitter of transistor t1 is connected to the base of transistor t2 . now the total circuit acts as a single transistor. this combination will gives high gain, as the gain is multiplied.
A darling ton is a beta current multiplier. it output can be used to drive low impedance device
TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127
Transistor.