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a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
Emitter, Collector and Base cutoff region, saturation region, and liner region
A transistor typically has three regions: the emitter, the base, and the collector. In a bipolar junction transistor (BJT), these regions are crucial for its operation, with the emitter injecting charge carriers, the base controlling their flow, and the collector collecting them. In a field-effect transistor (FET), the three regions consist of the source, gate, and drain. Each region plays a vital role in the transistor's functionality and performance.
In an NPN transistor, the majority carriers in the base region are called holes. The base is made of p-type material, which means it has an abundance of holes (positive charge carriers) compared to electrons. This allows for efficient charge transport when the transistor is in operation, facilitating the flow of current from the collector to the emitter.
To reverse bias a base-collector junction in a bipolar junction transistor (BJT), you need to apply a positive voltage to the collector relative to the base for an NPN transistor (or a negative voltage for a PNP transistor). This involves connecting the collector terminal to a higher potential and ensuring the base terminal is at a lower potential. As a result, the depletion region at the base-collector junction widens, preventing current flow between the collector and base. This condition is essential for transistor operation in certain configurations, such as in cutoff mode.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
holes are majority in base
The cutoff region is when the transistor doesn't have sufficient base current to drive a larger current from emitter to collector. Therefore, the transistor does not turn on and stays shut off.
Emitter, Collector and Base cutoff region, saturation region, and liner region
The breakdown region of a transistor is the region where the supply voltage, Vcc, becomes so large that the collector-emitter junction of the transistor breaks down and conducts, even though there is no base current.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
In the context of a bipolar junction transistor (BJT), the saturation region refers to the state where both the base-emitter and base-collector junctions are forward-biased, allowing maximum current to flow from collector to emitter. The active region occurs when the base-emitter junction is forward-biased while the base-collector junction is reverse-biased, enabling the transistor to amplify signals. The cutoff region is when both junctions are reverse-biased, resulting in minimal current flow, effectively turning the transistor off. These regions define the operational modes of the transistor in electronic circuits.
A transistor typically has three regions: the emitter, the base, and the collector. In a bipolar junction transistor (BJT), these regions are crucial for its operation, with the emitter injecting charge carriers, the base controlling their flow, and the collector collecting them. In a field-effect transistor (FET), the three regions consist of the source, gate, and drain. Each region plays a vital role in the transistor's functionality and performance.
In an NPN transistor, the majority carriers in the base region are called holes. The base is made of p-type material, which means it has an abundance of holes (positive charge carriers) compared to electrons. This allows for efficient charge transport when the transistor is in operation, facilitating the flow of current from the collector to the emitter.
For proper working of a transistor,the voltage at the base region must be more positive than that of the emitter region.The voltage at the collector region, in turn, must be more positive than that of the base region.when voltage is applied to transistor, the emitter supplies electron,which is pulled by the base from the emitter as it is more positive than the emitter.This movement of electrons from emitter to collector creates as flow of electricity through the transistor.The current passes from the emitter to the collector through the base.Thus, adjustment of voltage in the base region modifies the flow of the current in the transistor by changing the number of electron in the base region. In this way, small changes in the base voltage can cause large changes in the current flowing out of the collector. We have three transistor element, a.)Emitter b.)Base c.)Collector
Base-spreading resistance refers to the resistance that exists in a bipolar transistor due to the spreading of the base current into the collector region. This resistance can limit the transistor's high-frequency performance and impact its overall efficiency. Reducing base-spreading resistance is important for improving the speed and performance of a transistor.