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The threshold voltage will be increased (in case of an N-Mos), because the charge in the depletion region formed under the channel will be more (high density) and hence gate voltage has to overcome this charge for strong inversion.

Vt = (work function difference of gate and substrate) + 2*(substrate Fermi voltage) + (Qd/Cox)

Where, Qd = charge in Depletion region in Coulomb

Cox = Oxide capacitance

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