p-type majority carriers are holes
n-type majority carriers are electrons
A semiconductor of silicon doped with a pentavalent impurity expected to be an n-type semiconductor.When you dope a silicon semiconductor with pentavalent impurity the extra electron from the pentavalent compound remains free while others 4 form the covalent bonding with neighboring atoms leaving one unpaired electron.The extra electron remains in the higher energy state nearer to the conduction band, and, depending on the material, a small amount of energy can bring the electron to the conduction band and hence electron acts as the carrier. Thus an n-type of semiconductor is formed.
We know that electrons are the majority carriers in n type semiconductor and holes are the majority carriers in p type semiconductor. The conductivity of n type is more than p type semiconductor due to mobility of electrons is higher than that of holes.
p-type or n-type semiconductor alone is of very limited use in chips -- you can only make a thin-film resistor or parallel-plate capacitor with it. You also need the opposite type, the n-type semiconductor, to make junction diodes and MOS or bipolar transistors, which are essential components in an integrated circuit. ================================
An n-type semiconductor is formed by doping a pure semiconductor (silicon or germanium, for example) with atoms of a Group V element, typically phosphorus or arsenic. The dopant may be introduced when the crystal is formed or later, by diffusion or ion implantation.
It is called as DOPING. Doping is the process in which you add an impurity to a pure semiconductor to increase its conductivity. While doping is done, crystal structure of semiconductor is not disturbed.
In an N-type semiconductor, majority current carriers are electrons, while minority current carriers are holes. In a P-type semiconductor, majority current carriers are holes, while minority current carriers are electrons.
When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added. When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.
Majority charge carriers in the N-type side of a semiconductor material are electrons, because N-type semiconductor is doped with a material with 5 valence electrons. Semiconductor materials have 4 valence electrons and hold tightly to 8, so there is a "loose" electron for every atom of dopant. Therefore most of the charge carriers available are electrons. IE, electrons are the majority charge carriers. Minority charge carriers in N-type semiconductor are holes. Only a few holes (lack of an electron) are created by thermal effects, hence holes are the minority carriers in N-type material. The situation is reversed in P-type semiconductor. A material having only 3 valence electrons is doped into the semiconductor. The semiconductor atoms have 4 valence electrons try to hold tightly to 8, so there is a virtual hole created by a "missing" electron in the valence orbit. This acts as if it were a positive charge carrier. Most of the charge carriers are these holes, therefore in P-type semiconductor holes are the majority charge carrier. Again, reverse situation to minority charge carriers. Some electrons are loosened by thermal effects, they are the minority charge carriers in P-type semiconductor.
The formula to calculate hole density in an N-Type semiconductor is (p = \frac{{n_i^2}}{{n}}), where (p) is the hole density, (n_i) is the intrinsic carrier concentration, and (n) is the electron density. This formula is derived from the law of mass action and represents the equilibrium condition where the product of electron and hole concentrations equals the square of the intrinsic carrier concentration in a semiconductor material.
A semiconductor of silicon doped with a pentavalent impurity expected to be an n-type semiconductor.When you dope a silicon semiconductor with pentavalent impurity the extra electron from the pentavalent compound remains free while others 4 form the covalent bonding with neighboring atoms leaving one unpaired electron.The extra electron remains in the higher energy state nearer to the conduction band, and, depending on the material, a small amount of energy can bring the electron to the conduction band and hence electron acts as the carrier. Thus an n-type of semiconductor is formed.
p-type semiconductor is obtained by carrying out a process of doping that is by adding a certain type of atoms to the semiconductor in order to increase the number of the free charge carriers.
FOR n-type semiconductor the majority charge carrier is electron and for n-type semiconductor it is hole. the majority and minority charge carrier is result of free electron and hole. the majority charge carrier is responsible for transport of electron.
Becoz the n-type semi-conductor is formed by the elements which are in stable state and has one more free electron with them......... Mostly n-type semi-conductor's are formed with the elements of the 1st and 3rd group elements which are rich in free electron's..........
it would be a n-type semiconductor because phosphorus has more valence electrons than silicon does.
a pure semiconductors with a valency of three doped with a trivalent element is called p-type and a pure semiconductors with a valency of three doped with a pentavalent element is called n-type
N is the type of semiconductor, MOS refers to Metal Oxide Semiconductor device.
band diagram of p type semiconductor