Electron-hole recombination
there is difference between doping levels.In normal PN junction diode we add 1 impurity for 108 atoms where as in tunnel diode we add 1 impurity for 103 atoms.there is a probability that electrons may penetrate through barrier.So will not disappear in tunnel diode we get maximum current before barrier disappear where as we get maximum current after break down(there is no barrier) this effect lies within a certain voltage limit of 0.4V. When we consider the energy band structure in case of PN junction diode the fermi level lies inside the forbidden energy gap.In case of tunnel diode,the fermi level lies outside the forbidden energy band. In tunnel diode, there is a topic about negative resistance region where as we cannot discuss it in PN junction diode. ur friend, uma.
gunn diode is transfered electron device & PIN diode is semiconductor device
The process of conversion of AC into DC is known as rectification device used for this purpose is called as rectifier.A PN diode conducts well when it is forward biased and does not conduct Negligible current when it is reverse biased.This unidirectional nature of diode is used for the purpose of rectification.
Recombination in a diode is crucial because it facilitates the movement of charge carriers, enabling the diode to function effectively as a rectifier. In a p-n junction diode, when electrons from the n-type region recombine with holes in the p-type region, it creates a depletion region that allows current to flow in one direction while blocking it in the opposite direction. This process helps establish the diode's characteristic I-V curve, which is essential for controlling electrical current in circuits. Without recombination, the diode would not be able to regulate current flow properly.
whether we know that p-n diode is real diode. But still in case of semeconductor we see then silics is real diode.
A light emitting diode (LED) works by converting electrical energy into light through a process called electroluminescence. When an electric current passes through the semiconductor material in the LED, it causes the electrons to release energy in the form of photons, which are the particles of light. This process creates the visible light that we see when an LED is turned on.
A: By applying to a laser diode pulse of current enough energy to emit photons at a certain frequency.
A silicon avalanche photo diode is fabricated by the process called impact ionization.
There are diodes and there are diodes LED are made from arsenic doping to emit photons are never used for other purposes other then LED
Usually made from arsenic or other rare earths. they emit photons at specific voltage and or current the range changes with color, wattage and manufacture specification The emission of photons and the angle including all the spectrum color vary from device to device.
An LED, or Light Emitting Diode, is a semiconductor device that emits light when an electric current passes through it. Unlike traditional incandescent or fluorescent bulbs, LEDs are highly energy-efficient, durable, and versatile. They work by converting electrical energy directly into light through a process called electroluminescence, which occurs when electrons recombine with electron holes within the semiconductor material, releasing energy in the form of photons .
A light emitting diode is a special type of diode made of transparent semiconductor (silicon & germanium are opaque) like aluminum indium gallium phosphide. The selected semiconductor must also have a large enough band gap that when electrons fall into holes photons are emitted.
LEDs (light-emitting diodes) produce light through a process called electroluminescence. When a voltage is applied to the diode, electrons and electron holes combine in the semiconductor material, releasing energy in the form of photons (light). The specific material used in the LED determines the color of the light produced.
Trapped energy is recovered by a diode through the process of forward biasing and reverse recovery. When the diode is forward biased, it conducts current and releases the stored energy. During reverse recovery, the stored energy is returned as the diode switches from conducting to blocking state.
They are made by rare earth like gallium arsenide so when excited by a voltage and current photons are emitted. The angle frequency and emission are different for each device type
zener diode :zener diode operates under reverse bias voltageideal diode :ideal diode operates under forward bias voltage
there is difference between doping levels.In normal PN junction diode we add 1 impurity for 108 atoms where as in tunnel diode we add 1 impurity for 103 atoms.there is a probability that electrons may penetrate through barrier.So will not disappear in tunnel diode we get maximum current before barrier disappear where as we get maximum current after break down(there is no barrier) this effect lies within a certain voltage limit of 0.4V. When we consider the energy band structure in case of PN junction diode the fermi level lies inside the forbidden energy gap.In case of tunnel diode,the fermi level lies outside the forbidden energy band. In tunnel diode, there is a topic about negative resistance region where as we cannot discuss it in PN junction diode. ur friend, uma.