When a diode passes from forward biased to reverse biased it takes a short period of time for the charge carriers in the vicinity of the junction to recombine and create a nonconducting depletion region. During this time period the diode conducts in the reverse direction, this is called the reverse recovery time.
Its different for every kind of diode, to get the value for a specific diode consult the datasheet.
What is the cause of reverse recovery time in a pn junction diode
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
line Frequency diode have very low forward bias drops but their recovery characteristic(time) is very long. Their softness factor is low.
The most important specifications of a diode are:maximum forward currentpeak inverse voltage (aka maximum reverse voltage)reverse leakage currentreverse turnoff time (very important in high speed switching diodes)maximum power dissipation (only given for power rectifier diodes)forward bias knee voltageparasitic capacitance (only important in high frequency applications)All of this and more can be found in the datasheet for the diode.
A: Most useful or actually the only time that it is useful is when it has reached its predictable reverse breakdown voltage.
This can vary significantly from diode to diode (especially the reverse recovery time and peak reverse breakdown voltage), so always consult the datasheet.
What is the cause of reverse recovery time in a pn junction diode
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
If the reverse recovery time of the diode is too long for the operating frequency, the diode will never turn off.
An ordinary semiconductor diode uses a P-N junction, but when reverse biased it takes a period of time to remove the current carriers from that junction to create the depletion region that blocks reverse conduction. A Shockley diode instead uses a P semiconductor-metal junction, which removes the current carriers much faster from the semiconductor allowing the device to switch much faster. It also has a much lower forward bias voltage than an ordinary diode. In many ways it is similar to the previous point contact diodes (a piece of semiconductor like galena or germanium with a metal "cat's whisker" point contact) in operation, but is more reliable and easier to mass produce.
it relates to reverse recovery charge, Qrr during switch off of diode. The reverse current has to phases. 1st it reaches to max reverse recovery value , Irrm (in opposite direction of forward current), 2nd it finally reaches to zero. Softness factor,S is the ratio of the time is needed in phase 2, t2 to the time needed in phase 1 t1, S= t2/t1
pn junction diode conducts current in one directions where as the zener diode conducts in both the directions. large current flow damage the PN junction diode but zener diode conducts eventhough there is a large current........
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
line Frequency diode have very low forward bias drops but their recovery characteristic(time) is very long. Their softness factor is low.
A: Actually no. If the current can be limited it may Even oscillate and each diode will behave differently even tough they are from the same family. A reverse breakdown usually means a blown diode in a circuit the hear from a hi voltage and the hi current will surpass its power dissipation and blow short most of the time.
A diode can only be biased in one direction at a time. It is either forward biased, in which case it conducts, or it is reverse biased in which case it does not, unless its reverse breakdown voltage has been reached. Perhaps you are thinking of a half-wave rectifier, where only one diode is used to conduct on alternate half-cycles of the AC input?
The storage time for a diode is typically very short, on the order of nanoseconds to microseconds. This is the time required for the diode to fully recover its original state after being forward or reverse biased. It is an important parameter to consider in high-speed applications.