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Why breakdown voltage increase in reverse biased p-n junction diode?
when the p-n junction is heavily doped p-n junction diode has very sharp breakdown voltage.
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
What is the semiconductor junction diode?
A single crystal of semiconductor material, part doped with N type impurities and part doped with P type impurities, with the N and P types meeting at a single junction. This junction conducts only when forward biased. Such a diode may be an independent discrete component or it may be part of an integrated circuit (in which case the entire integrated circuit is the single crystal).
Is it possible to make a junction diode by pressing two pieces of n type and p type together?
No, a functioning junction diode cannot be made by placing two oppositely doped pieces of semiconductor in contact with each other. A functioning junction diode can only be created in one piece of semiconductor with oppositely doped regions in it.However if you placed the two oppositely doped pieces of semiconductor in contact with each other and HEATED them until they just began to melt and joined becoming one piece, it is possible to create a functioning junction diode this way. But this is a tricky and not very reliable way to do it, especially if you melt it just a tiny bit too much you will completely mix the two pieces and lose the doping entirely.
How is zener diode different from p-n junction diode?
A p-n junction diode is made of a crystal of semiconductor. Impurities are added to it to create a region on one side that contains negative charge carriers (electrons), called n-type semiconductor, and a region on the other side that contains positive charge carriers (holes), called p-type semiconductor. A Zener diode contains a heavily doped pn junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material. A reverse biased Zener diode will exhibit a controlled breakdown and let the current flow to keep the voltage across the Zener diode at the Zener voltage.
What is the difference between an ideal zener diode and practical zener diode?
Zener diode is heavily doped pn junction diode.
Why breakdown voltage increase in reverse biased p-n junction diode?
when the p-n junction is heavily doped p-n junction diode has very sharp breakdown voltage.
When a diode is doped with either a pentavalent or a trivalent impurity its resistance will be?
it will increase
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
Why zener diodes are heavily doped?
Zener diodes are heavily doped to create a narrow depletion region, allowing them to operate in the reverse breakdown region where they exhibit the Zener effect. This effect causes the diode to conduct in reverse bias at a specific voltage, ideal for voltage regulation applications.
Why is a gunn diode called a diode?
A Gunn diode, also known as a transferred electron device (TED), is a form of diode used in high-frequency electronics. It is somewhat unusual in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Conduction will take place as in any conductive material with current being proportional to the applied voltage. Eventually, at higher field values, the conductive properties of the middle layer will be altered, increasing its resistivity and reducing the gradient across it, preventing further conduction and current actually starts to fall down. In practice, this means a Gunn diode has a region of negative differential resistance.
Why tunnel diode are used in negative resistance region?
because that the tunnel diode is a standard pn junction diode in many respect except its highly doped pn junction so it has some characteristics in the negative resistance region another that its a standard diode
Can LED be manufactured by intrinsic semi conductor?
LED is short for Light Emitting Diode. It is a special type of diode that emits light when it is forward biased. Diodes are made using N doped and P doped semiconductors(not intrinsic/pure.) They form a junction that allows the system to act as a diode. So in short, no. However these doped semiconductors were made using pure(intrinsic) semiconductors. Therefore depending on how far you trace back the process the semiconductors were once intrinsic. So depending on how you look at it, yes.
What is meant by gun diode?
A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a semiconductor electronic component, used in high-frequency electronics. Its internal construction is unlike other diodes in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Conduction will take place as in any conductive material with current being proportional to the applied voltage. Eventually, at higher field values, the conductive properties of the middle layer will be altered, increasing its resistivity, preventing further conduction and current starts to fall. This means a Gunn diode has a region of negative differential resistance. Its largest use is in electronic oscillators to generate microwaves, in applications such as radar speed guns and microwave relay transmitters
What is the semiconductor junction diode?
A single crystal of semiconductor material, part doped with N type impurities and part doped with P type impurities, with the N and P types meeting at a single junction. This junction conducts only when forward biased. Such a diode may be an independent discrete component or it may be part of an integrated circuit (in which case the entire integrated circuit is the single crystal).
Is it possible to make a junction diode by pressing two pieces of n type and p type together?
No, a functioning junction diode cannot be made by placing two oppositely doped pieces of semiconductor in contact with each other. A functioning junction diode can only be created in one piece of semiconductor with oppositely doped regions in it.However if you placed the two oppositely doped pieces of semiconductor in contact with each other and HEATED them until they just began to melt and joined becoming one piece, it is possible to create a functioning junction diode this way. But this is a tricky and not very reliable way to do it, especially if you melt it just a tiny bit too much you will completely mix the two pieces and lose the doping entirely.
Is a diode laser a nd. yag laser?
No, a diode laser and an Nd:YAG laser are two different types of lasers. A diode laser uses a diode as the laser medium and is commonly used for various applications such as hair removal and skin treatments. On the other hand, an Nd:YAG laser uses neodymium-doped yttrium aluminum garnet as the laser medium and is often used for medical and cosmetic procedures, as well as in industrial applications.
