0
Since the base in an n-p-n transistor is kept very thin, very few electrons get to recombine with holes and escape out of base, most of the electrons are injected from emitter into the collector. As a result, Base-current is very small. Whereas the Collector-current is almost equal to the Emitter-current.
What else can I help you with?
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
When diode is heavily doped?
base
What is the effect of temperature on hall coefficient of a lightly doped semiconductor?
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
Why the ammeter is highly doped in ujt?
In a Unijunction Transistor (UJT), the emitter is highly doped to ensure a significant concentration of charge carriers, which enhances its ability to inject current into the lightly doped n-type base. This high doping level creates a strong electric field that facilitates the rapid movement of carriers, resulting in a low threshold voltage for conduction. Consequently, the high doping helps achieve the desired switching characteristics and sensitivity of the UJT, making it effective in applications such as oscillators and timing circuits.
With neat diagram explain the steps involved in the p-well process of CMOS fabrication?
the starting material is either p+ or n+ substrate with a lightly doped epitaxial layer.
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
Why base of transistor is lightly doped?
The width of the base is very thin to increase the majority carrier concentration gradient in the base region thereby enhancing the diffusion current and also to reduce the number of majority carriers lost due to recombination in the base.
When diode is heavily doped?
base
Why inner two layers of scr are lightly doped and are wide?
Explain why the innerlayer two layers of an scr are lightly doprd and are
What part of transistor are moderately doped?
base
What is the effect of temperature on hall coefficient of a lightly doped semiconductor?
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
Why the ammeter is highly doped in ujt?
In a Unijunction Transistor (UJT), the emitter is highly doped to ensure a significant concentration of charge carriers, which enhances its ability to inject current into the lightly doped n-type base. This high doping level creates a strong electric field that facilitates the rapid movement of carriers, resulting in a low threshold voltage for conduction. Consequently, the high doping helps achieve the desired switching characteristics and sensitivity of the UJT, making it effective in applications such as oscillators and timing circuits.
What are degenerate and non degenerate semiconductors?
Non degenerate semiconductors are those which: -are lightly doped -have less value of electron and hole concentration -violate Pauli's exclusion principle Degenerate semiconductors are those which: -are highly doped -have high value of electron and hole concentration -follow Pauli's exclusion principle
With neat diagram explain the steps involved in the p-well process of CMOS fabrication?
the starting material is either p+ or n+ substrate with a lightly doped epitaxial layer.
How many doped regions in a Bipolar transistor?
3: emitter, base, collectorThere are three regions but to be absolutely picky I think only two of them need be doped.Nope: they MUST be doped NPN or PNP. If any are undoped it will not function as a transistor.
Why lightly doped diode is used in avalanche breakdown?
Lightly doped diodes are used in avalanche breakdown because their lower impurity concentration allows for a wider depletion region, which enhances the electric field within the diode. This strong electric field facilitates the acceleration of charge carriers, leading to impact ionization when the reverse bias exceeds a certain threshold. As a result, the diode can sustain high reverse voltages and trigger avalanche breakdown, enabling applications such as voltage regulation and protection circuits.
Describe the difference between a UJT and a PUT?
i. Constructional structures The UJT is made up of a lightly doped n-region known as the base region onto which is joined a small heavily doped p-region called the emmitter. The PUT on the other hand is a four layer device similar to an SCR except that the gate terminal of the PUT is connected to the n-region adjacent to the anode. ii.Operation The intrinsic stand-off ratio of a UJT is fixed hence operating characteristics can not be alterd. The PUT, on the other hand has operating characteristics that can be altered. These include base-base resistance,intrinsic stand-off voltage, valley current and peak current and all these can be altered by setting the values of two external resistors
