When the modulating signal is greater than the carrier it can cause over modulation, that will cut of the peaks of the modulating signal and when detected by the receiver the final audio signal will also show the flat peaks and the results will be a distorted sound at the speaker. A 90% modulation is always better than a 100% modulation. In the case of frequency modulation it will cause the frequency to shift to much and will result in a to wide band and will cause adjacent channel interference, it can be so severe that a transmitter can occupy the whole spectrum of the band that is allocated for FM broadcasting.
Then the signal will be the same amplitude.
Modulation index(m) is given by the formula (|x(t)max|)/v, where x(t) is the modulating signal and v is the maximum carrier voltage. so m will be greater then 1 if x(t) is greater then v. This results in overlapping of upper and lower wave in the output signal which is called diagonal clipping and this information is lost and thus greater value of m is undesirable.
LSA mean Limited Space Charge Accumlation mode. Frequency of oscillation in the LSA mode is independent of the transit time of the carriers and is determined solely by the circuit external to the device. Output power in the LSA mode can be greater than That in the other modes
...It is due to the fact that at higher temperatures, the energy in the semiconductor is greater than Eg by a considerable amount, meaning that the conduction band is more full. At these high temperatures, the dopants' role on electron-hole pairs is negligible.
EMF is greater
Then the signal will be the same amplitude.
An equation is linear if it can be expressed in the form (y = mx + b), where (m) and (b) are constants, and the variables are raised only to the first power and multiplied by constants. In contrast, an equation is nonlinear if it includes variables raised to powers greater than one, products of variables, or functions such as exponentials, logarithms, or trigonometric functions. To determine the linearity, check for these characteristics in the equation. If any of these nonlinear elements are present, the equation is nonlinear.
There are infinitely many options. The equation could be a polynomial of degree greater than 1, or it could be a power function, a log function or any combination of these with trig functions. The problem is exacerbated by the fact that there is no clue in the question as to what a stands for.
The mobility of N type charge current carriers is more than two times greater than the mobility of P type charge carriers . Resulting in faster transistor operating speed .
Modulation index(m) is given by the formula (|x(t)max|)/v, where x(t) is the modulating signal and v is the maximum carrier voltage. so m will be greater then 1 if x(t) is greater then v. This results in overlapping of upper and lower wave in the output signal which is called diagonal clipping and this information is lost and thus greater value of m is undesirable.
An example of nonlinear is the human ear! A 100 ohm linear potentiometer is one in which it's properties dictate that when it is set to it's halfway point, the impedance from the wiper (for lack of a long lost memory of the word) to one side of the pot is 50 ohms; or half of the pot's value. We hear nonlinearly. Hence, volume controls are nonlinear potentiometers. That means that when you set it to it's half way point, the impedance from the wiper to one side is greater than the that of the other side. On a graph, the 'impedance to wiper' position ratio forms a line which is not linear or not strait.
The p-region of a diode contains an abundance of holes, but also contains a small percentage of electrons. Similarly, the n-region also contains a small percentage of holes. These are knows as the minority carriers. Again, like charges repel, so when the diode is reverse biased, these minority carriers will migrate toward the boundary region. The minority carriers will recombine at the boundary region, and thus enable an electric current. Because these carriers are few in number (orders of magnitude less than the majority carriers), this current is very small. This represents the leakage current of a diode. The mobility of minority carriers increases with temperature, and heating a diode will cause greater numbers of minority carriers to congregate at the boundary region. This will increase leakage current. Surface contamination on the diode may also allow small amounts of electricity to be conducted, again causing leakage.
the collector is where we are getting the the holes or electrons from the emiiter through the base (wrt to the transistor we use). As the carriers are collected there,most heat is dissipited there. so it must be of large size
Emerson Wireless supports Emerson phones. There are a wide selection of phones available form this well known manufacturer. You may want to look into other carriers with a greater selection of phones.
As temperature increases, the drift velocity of charge carriers in a material typically increases. This is because higher temperatures lead to greater thermal energy, which causes the charge carriers to move with higher average speeds. However, at extremely high temperatures, the increased thermal energy can also disrupt the regular lattice structure, leading to increased scattering and a decrease in drift velocity.
A polynomial equation of order >1 that is, where the power of the variable is greater than 1 is a non linear function. A transcendental function is one that cannot be expressed as a finite number of algebaraic operations (addition, multiplication, roots). The exponential and trigonometric functions (and their inverses) are examples.
Forward bias is when the height of the depletion layer is reduced such that a greater number of majority charge carriers have sufficient energy to overcome the potential barrier while revers bias is when the height of the potential barrier is increased so that very few majority charge carriers have sufficient energy to surmount the potential barrier. All the above phenomena takes place when a potential barrier is applied across the pn junction.