A diode characteristic curve is a curve that describes the characteristic of diode and it is normally based on experiment data.
The curve itself has two distinctly separate parts.One part lies in the first quadrant and it stands for the forward-biased situtation.It reflets the barrier voltage(meaning the smallest amount of voltage that can turn on the diode).For Germannium diode,the barrier voltage is 0.3V while silicon diode is 0.7V,but the real value differs according to the temperature and current flows through the diode.The other part lies in the third quadrant which indicates the reverse-biased situation,from which you can find out the leakage current(the current flow through before Breakdown Point).
Typcially, a diode characteristic curve varies from diode to diode.But theoretically speaking,we regard them as the same.
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when the material fails
compression
On a stress strain curve the elastic limit is the point where the straight portion curve first starts to curve. When load is removed strain will return to zero. The yield point is a point on the curve just beyond the elastic limit. When load is removed strain will not return to zero. It will return approximately as a straight line parallel to the original, and have an offset strain value. The yield point offset is arbitrary but usually defined as 0.2% (.002 permanent strain) as most common strain devices can measure that amount.
becuase its suppose to
The dynamic resistance of a diode, be it zener or otherwise, will be different from its static resistance because a diode is not a resistor, and resistance is not a function of current flow. It is a diode, and a diode has its own characteristic voltage to current curve, forward and, in the case of a zener, reverse.
A: Any device whether it be diode, led, scr, triac and so forth has characteristic of current/voltage behaviour as these I/v are varied
A reverse-biased diode is typically operated in the reverse breakdown region of its current-voltage characteristic curve. In this region, the diode allows a small reverse current to flow, which is generally negligible until a certain breakdown voltage is reached. Beyond this breakdown voltage, the diode can conduct significant current, but in normal applications, it operates below this threshold to prevent damage. Thus, the diode primarily remains in the reverse bias region with minimal current flow.
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yes, of course it is. one way is using a curve tracer.
The classic "S" shaped curve that is characteristic of logistic growth.
The diode that has a negative resistance region in its voltage-current curve.
It conducts in only one direction.
The incremental resistance of a diode is the inverse of the slope of the V-I curve at the operating point.
Recombination in a diode is crucial because it facilitates the movement of charge carriers, enabling the diode to function effectively as a rectifier. In a p-n junction diode, when electrons from the n-type region recombine with holes in the p-type region, it creates a depletion region that allows current to flow in one direction while blocking it in the opposite direction. This process helps establish the diode's characteristic I-V curve, which is essential for controlling electrical current in circuits. Without recombination, the diode would not be able to regulate current flow properly.
Absolutely not. An ideal diode's characteristic would be perfect conduction in the forward direction and perfect insulation (no conduction) in the reverse direction. Silicon diodes come respectably close.
The point in the forward operating region of the characteristic curve where conduction starts to increase rapidly is called Knee voltage of a PN Junction Diode.The breakdown voltage of a diode is the minimum reverse voltage to make the diode conduct in reverse.(or) Breakdown voltage is a parameter of a diode that defines the largest reverse voltage that can be applied without causing an exponential increase in the current in the diode.-- Dinakar