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To design a bjt amplifier with gain 10, consider that gain in a class A common emitter configuration is collector resistance divided by emitter resistance.

So, pick the two resistors so that their ratio is ten. Bias the base so that the collector is at the center of the operating voltage range, along with the transistor being at the center of its linear region.

Of course, you need to consider impedance and operating current, so you need to choose carefully. Also, the beta (hFe) of the transistor must be substantially more than ten for this to work reliably.

Often, this voltage gain stage is followed by a class C common collector emitter follower to give you current gain as well.

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Q: How do you design a bjt amplifier with gain 10?
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How emitter bypass resistor stabilizes the amplifier against temperature?

In the common emitter (Class A) amplifier design of a BJT, gain is collector resistance divided by emitter resistance, or hFe, whichever is less. If the emitter resistance is zero, then gain is hFe. In this configuration, gain is unstable, because hFe is temperature dependent. In fact, under certain circumstances, a BJT can experience thermal runaway. The emitter resistor (along with the collector resistor) places a limit on the expected gain of the stage. If, for example, you design with a ratio of 10, then you expect a gain of 10. If hFe is 25-100, gain is still 10.


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