There are three men accredited to inventing the transistor, they are John Bardeen, Walter Brattain, and William Shockley.
A Unijunction Transistor is a transistor that acts solely as a switch.
The transistor was invented by John Bardeen, Walter Brattain, and William Shockley at Bell Labs in 1947. They developed the first point-contact transistor, which was a crucial advancement in semiconductor technology. This invention laid the foundation for modern electronics, enabling the development of various devices, including computers and smartphones. Their work earned them the Nobel Prize in Physics in 1956.
the best way is to compeair the data sheet of that transistor to the readings of that transistor. . . . .and u can get the readings of that transistor by using a fungction genrator and a c.r.o
relay and vacuum tube are the electronics devices which are invented firstly in the field of electronics. but they are not revolutionary as transistor which was discovered by John Bardeen.after that other devices are invented like fet mosfet and after that digital devices was invented with the help of these devices.
Transistor with 2 gate on top and bot of the channel
It was invented by a group of French scientists during the French revolution =).
they invented the first transistor:)
a group or scientists in portugal.just kidding.australia
Bell Labs
Bell Labs.
I dont know
The transistor is a replacement for vacuum tubes, which is smaller, cheaper, and more reliable for most purposes.
he invented the first transistor
aliens from the Roswell crash
Field Effect Transistor (FET) was invented in 1926 by Julius E. Lilienfeld.
The Bipolar Junction Transistor (BJT) was invented by three scientists, William Shockley, John Bardeen and Walter Brattain, in 1948. They all worked at Bell Labs, and were trying to find something to replace the bulky and heat wasting vacuum tubes. They had been pursuing a Field Effect Transistor (FET) based on copper oxide when they stumbled upon a very different amplifying effect produced by closely-spaced metal contacts touching Germanium semiconductor. They won the Nobel Prize in Physics for their work in 1956. When the Bell Labs scientists continued to investigate a possible FET transistor, they discovered that one of these had already been patented by Physicist J. Edgar Lilienfeld. Lilienfeld's insulated-gate FET (or MOSFET) was based on thin film semiconductor deposited on glass, and was invented over 25 years before the BJT, in the early 1920s. Transistor History http://nobelprize.org/educational_games/physics/transistor/history/ The Transistor Museum http://semiconductormuseum.com/Museum_Index.htm Lilienfeld transistor history http://chem.ch.huji.ac.il/history/lilienfeld.htm William Shockley, Walter Brattain, John Bardeen
December 16, 1947