The first solid state four layer thyristors made were indeed made of germanium and therefor could be called "germanium controlled rectifiers" (although this name was never used in the literature, they were just called thyristors). But when it became practical in the early 1960s to make solid state devices using silicon, the higher operating junction temperature and the ability to self passivate junctions in silicon devices soon made germanium devices obsolete especially for high power applications (which include many of the applications of solid state four layer thyristors).
The term thyristor was coined originally for these devices as they were seen as a solid state version of the gas filled thyratron tube. The idea of calling them "controlled rectifiers" only came years later when silicon had replaced germanium for most purposes in solid state devices.
silicon is less sensitive towards temperature.It costs low compared to germanium,
Oh, dude, like, a good slogan for germanium could be "Germanium: It's like silicon's cool cousin." Because, you know, germanium is in the same family as silicon, but it's not as popular. So, it's like the hipster of the periodic table.
because lekage current of silicon is less than germenium
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
A: Because the element has different property as gallium arsenide.
Any semiconductor can be used for rectification, so germanium is suitable.However what you may be thinking of is power rectifiers. Germanium cannot operate with a junction temperature above about 60C, so this is a significant limitation on the power handling capability of germanium power rectifiers (even copper oxide or selenium power rectifiers can handle more power, so they were used for many years before quality silicon power rectifiers became available).
Copper is a metal and does not exhibit semiconducting properties like germanium and silicon. Germanium and silicon are semiconductors with a crystalline structure that allows for controlled conduction of electricity. This difference in atomic structure is what gives rise to their unique electrical properties.
the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)
A. E. Jackets has written: 'Sinusoidal inverter circuits using silicon controlled rectifiers'
Germanium is a metal that conducts electricity and germanium crystals can be prepared in a manner allowing them to conduct electrify through their crystal lattice is one direction only, making germanium crystals valuable for use in transistors and rectifiers.
Germanium is not used in integrated circuits. Silicon is.
Silicon and Germanium are the elements used in transistors
germanium
germanium
Generally SCR is used at high power applications, in order to withstand the temperature dissipated in the SCR, THERMAL STABILITY is very high enough. It means that thermal stability of silicon is very high compared to germanium that's why germanium is not preferred. But that does not mean it is not possible, in fact before silicon became common in the 1960s devices equivalent to the SCR were built using germanium!
Yes,silicon and germanium are semiconductors.
There are basically two types of rectifiers one is the half wave rectifier and the other is the full wave rectifies. The full wave rectifier is further classified into two types namely the bridge rectifier and the center tapped rectifier.There are also silicon controlled rectifiers nowadays.