1.Bandgap is comparatively large hence suitable for low & high temp.
2.High melting point of si makes it stable over wide temp.
3.si is more freely available in nature.
4.leakage current less than ge.
silicon is the most commonly used semiconductor. As it is abundant and inexpensive. However, it also has the advantage of a great oxide layer (silicon dioxide) which serves as as dielectric in many applications, and as a result it is relatively easy to make devices out of Si. It's this oxide layer that makes silicon more common than germanium, which does not readily form an oxide layer because Ge has less affinity with oxygen when compared to Si, even though the there are many charge carriers in Ge as compared to Si its the ability to form the oxide layer which makes Si more preferable than Ge
GE category means GENERAL category
The duration of Si Si Senor is 1140.0 seconds.
GE owned NBC and in 2004 they merged with Vivendi Universal Entertainment to create NBC Universal. GE owns 80% and Vivendi owns 20%.
better than ... what ?
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
Si can be fabricated into ICs inexpensively, Ge cannot.Si maximum junction operating temperature is 150C, Ge is only 70C.Si is as cheap and plentiful as sand, Ge is more expensive and rarer.etc.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
Ge (Germanium) and Si (Silicon) are both from group 14 in the periodic table. They are in the same group but not in the same period. Ge is in period 4, while Si is in period 3.
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
Si ge 32A he yi ge xiang jiao shao nian - 1996 is rated/received certificates of: Hong Kong:IIB
because in Ge mobility of both electrons and holes is higher than the corresponding carriers in Si....and second reason -Ge can be refined and processed more easily..
Cry-al-ge-si-a.