Assuming you do not mean the plastic bags at the supermarket checkout that cost nothing, then you may be referring to free charge carriers in electical conductors and semiconductors, which are electrons in metallic conductors and electrons or "holes" in semiconductors. Now what was the question?
No, the Hall voltage will not be identical in semiconductors and conductors due to differences in charge carrier concentration and mobility. In conductors, there are typically more free charge carriers, leading to a different Hall voltage response compared to semiconductors, which have fewer charge carriers and can also have both electrons and holes contributing to the Hall effect. Additionally, the type of charge carriers affects the sign and magnitude of the Hall voltage in these materials.
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Depletion layer The area in a P-N junction that is free of (i.e., depleted of) current carriers.
Equilibrium was not reached with 10 mM glucose and 100 membrane carriers likely due to saturation of the carriers. When the concentration of glucose exceeds the transport capacity of the carriers, not all glucose molecules can be transported across the membrane simultaneously. Additionally, if the carriers have a limited turnover rate, the influx of glucose may outpace the rate at which it can be transported, preventing equilibrium from being achieved.
Under normal circumstances, a conductor has no overall charge. Even though there are large numbers of free electrons available as charge carriers, for each free electron there is a corresponding proton within the atoms that make up the conductor. With equal numbers of protons and electrons, there is no overall charge.
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The basic idea is that in a resistor, there are less free charge carriers (usually electrons).
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breakdown can depend on two phenomenons: band to band tunneling (quantum theory) and avalanche multiplication. For simplicity, let's talk about A.M.: With negative voltages, E field is very high and induces free carriers to cross depleted region. A percentage of free carriers (depends on material, depletion region width, doping, temperature and voltage applied) will impact with crystal and generate a pair of free carriers (hole + electron). So, for each impact, a couple of carriers is generated and accelerated by E field => repeat this for all the depletion region and all the width and you'll find a rapid increase of inverse current.