breakdown can depend on two phenomenons: band to band tunneling (quantum theory) and avalanche multiplication. For simplicity, let's talk about A.M.:
With negative voltages, E field is very high and induces free carriers to cross depleted region. A percentage of free carriers (depends on material, depletion region width, doping, temperature and voltage applied) will impact with crystal and generate a pair of free carriers (hole + electron). So, for each impact, a couple of carriers is generated and accelerated by E field => repeat this for all the depletion region and all the width and you'll find a rapid increase of inverse current.
The current increases rapidly at breakdown voltage due to the phenomenon of avalanche breakdown in semiconductor materials. At this voltage, the electric field strength becomes sufficient to ionize atoms, creating free charge carriers. These carriers are accelerated by the electric field, leading to further ionization and a chain reaction that dramatically increases current flow. This process results in a sudden and significant rise in current, often leading to device failure if not controlled.
After breakdown voltage is reached in a zener diode the current increases drastically.
effect of temperature on zener & avalanche breakdown
Secondary breakdown is a drawback of bipolar junction transistors (BJT's), particularly in power transistors. Simply put, when high current flow causes a build up of electric fields inside of the semiconductor crystal creating "hot spots" which cause the transistor to fail. At the large collector current, the collector to emitter drops. due to drop in voltage,collector current increases in power dessipation. this power dessipation is liocalized in highly concentrated region. In this region temperature increases rapidly. Semiconductor material, regardless if it is P-type or N-type has a negative temperature coefficient meaning that when temperature increases its resistance decreases. Ohm's Law states that Voltage equals Current times Resistance which shows that as resistance decreases current increases. Since Power equals Current times Voltage, if current increases then power increases. A bi-product of power is heat. So, in these hot spots increased current creates heat in a small area which causes resistance to decrease in that area causing higher current flow in that area causing a further increase of heat. The domino effect eventually causes the transistor to fail.
Knee voltage (cut in voltage) :-The forward voltage at which the current through the P-N Junction starts increasing rapidly is called as Cut in voltage or knee voltage Breakdown voltage :-It is the minimum reverse voltage at which the P-N Junction can conduct without damage to the current
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Avalanche breakdown in Silicon-Controlled Rectifiers (SCRs) refers to the rapid increase in current flow through the device due to high reverse voltage. This phenomenon occurs when the reverse voltage exceeds the breakdown voltage of the SCR, causing a sudden breakdown of the junction and a rapid increase in current flow. Avalanche breakdown can damage the SCR if not properly controlled.
conductivity of semiconductors increases with increase in temperature as breakdown of covalent bonds take place in the semiconductor due to increase in temp but more & more increase in the temp may result in the breakdown or damage of the semiconductor which results in the decrease in conductivity of semiconductor
The wind IS the current in this case.
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
The only way current can increase while resistance in a circuit increases is if voltage, which is the force that causes electric current, increases.