When two dissimilar metals come into contact as in the case of copper and ferrous due to diffusion electrons get migrated right from one to the other and so a potential of the order of few volts is created. This is called junction potential. This plays an important role in giving thermo emf for a thermo couple
is the release of acetylcholine from the motor neuron into the synaptic cleft.
The folded region of the sarcolemma at the neuromuscular junction is called the motor end plate. It is responsible for receiving signals from the motor neuron and initiating muscle contraction. The motor end plate is rich in acetylcholine receptors, which play a key role in neurotransmission at the neuromuscular junction.
The point where a nerve fiber connects to a muscle cell is known as the neuromuscular junction. This connection allows the nerve signal, or action potential, to be transmitted from the nerve to the muscle cell, triggering muscle contraction.
The space junction between two neurons is called a synapse. It is a small gap where the electrical signal in the form of an action potential is converted into a chemical signal in the form of neurotransmitters to allow communication between neurons.
A critical event that occurs at the neuromuscular junction is the release of acetylcholine from the motor neuron's axon terminal. This neurotransmitter binds to receptors on the muscle membrane, leading to depolarization of the muscle cell and generation of an action potential, initiating muscle contraction. Dysfunctions at the neuromuscular junction can lead to diseases like myasthenia gravis.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
The built-in potential is the potential difference established at the junction of two different materials, such as a p-n junction in a semiconductor device. It arises due to the electrostatic forces that separate the charge carriers across the junction, creating a barrier for the flow of current. This potential is an important parameter in determining the behavior of semiconductor devices.
A PN junction allows current to flow when it is forward-biased, meaning the positive terminal of a voltage source is connected to the p-type material and the negative terminal to the n-type material. This reduces the barrier potential at the junction, allowing charge carriers (holes and electrons) to recombine and flow across the junction. In contrast, when the junction is reverse-biased, the barrier potential increases, preventing current flow.
A liquid junction potential is a potential difference between two solutions caused by the diffusion of an ion faster than the other. Salt bridges between these solutions containing high concentration of salts (eg. KCl, KNO3, NH4NO3) with ions that diffuse at the same rate minimising this effect.
When light shines on a semiconductor p-n junction, the energy from photons can create electron-hole pairs, generating a potential difference across the junction. This potential difference can create an electric current when connected to an external circuit, allowing for the generation of electricity through the photovoltaic effect.
when a p-n junction is formed electrons from the neutral N type goes to neutral P type. In the junction there will not be any electron or hole. In the junction because of earning electrons, P side becomes negative(ion) , & N side becomes positive(ion). So there will be a potential deference . This is known as the BARRIER......
depletion layer surrounding the junction where electrons from N side have fallen into holes from P side.
A forward biased p-n junction is when an external voltage is applied in such a way that the positive terminal is connected to the p-type material and the negative terminal is connected to the n-type material. This reduces the barrier potential, allowing current to flow through the junction.
When light falls on the junction of a pn junction/diode the potential barrier gets break down due to majorty of electrons flow and they release energy in the form of light.
If the potential across the junction is high enough, then it could cause it to conduct. This is with all diodes and is the forward voltage. If it is not high enough, it will just sit there and not conduct.
when the p-type and n-type material joined together the electrons and holes near the junction(joining point of p & N type) jumped to other side the electrons in N-type fill holes in P-type near the junction so a depleted(non nonconducting ions) accumulated at the junction now if any of charge wanna move in other junction it has to break this wall so that's y potential barrier developed