Drift velocity Vd = acceleration x relaxation time
So Vd = (E e / m) * t
Now Vd / E is defined as the drift velocity per unit electric field and known to be mobility of free electron
Hence mobility = (e/m) x t
Thus mobility will be different in different material as it depends on relaxation time.
e/m is the specific charge of electron which is a constant value equals to 1.759 x 1011
As we know in klystron tube drift space is assumed to be free of any electric field. Therefore, the high velocity electron emerging in the later period are able to overtake the low velocity electrons leaving the buncher grids. As a result of these actions, the electrons gradually bunch together as they travel down the drift space. This mechanism of variation in electron velocity in the drift space is known as velocity modulation.
As we know , resistance(R) is directly proportional to length(L) of conductor and resistence(R) is inversely proportional to current (I) and I=nAqv (v is drift velocity) So , if we decrease the length of the conductor , resistance of the conductor will decrease and current(I) will increase and drift velocity of free electrons will increase . And as we know resistance and temperature have direct relation so , by decreasing the temperature resistence will decrease and current will increase . So drift velocity will increase .
Drift velocity is the average velocity with which charged particles, such as electrons, move in a conductor in the presence of an electric field. It is a very slow velocity due to frequent collisions with atoms in the material. Drift velocity is responsible for the flow of electric current in a circuit.
The drift velocity of free electrons in a conductor is directly proportional to the magnitude of the electric current flowing through the conductor. This means that as the current increases, the drift velocity of the electrons also increases. The relationship is described by the equation I = nAvq, where I is the current, n is the number density of charge carriers, A is the cross-sectional area of the conductor, v is the drift velocity, and q is the charge of the charge carrier.
When a voltage is applied across a conductor, the electric field created exerts a force on the free electrons within the material. These electrons experience a net force in the direction opposite to the field, causing them to move with a steady drift velocity in that direction. Over time, a balance is achieved between the force due to the electric field and the resistance within the material, resulting in a constant drift velocity.
As we know in klystron tube drift space is assumed to be free of any electric field. Therefore, the high velocity electron emerging in the later period are able to overtake the low velocity electrons leaving the buncher grids. As a result of these actions, the electrons gradually bunch together as they travel down the drift space. This mechanism of variation in electron velocity in the drift space is known as velocity modulation.
As we know , resistance(R) is directly proportional to length(L) of conductor and resistence(R) is inversely proportional to current (I) and I=nAqv (v is drift velocity) So , if we decrease the length of the conductor , resistance of the conductor will decrease and current(I) will increase and drift velocity of free electrons will increase . And as we know resistance and temperature have direct relation so , by decreasing the temperature resistence will decrease and current will increase . So drift velocity will increase .
The drift velocity is found from the formula; V = I/nqA Where n = 8.5 x10^28 1/mmm (number density of free electrons) q = 1.6 x 10^-19 C (electron charge) I = 200 A (current) A = 1 x10^-4 mm (cross sectional area in square meters) V = drift velocity in meters/sec My calculator is dead so you'll have to do the calculations. Ok, calculator fixed. I get .000147 m/s = 14.7 x 10^-5 m/s
Drift velocity is the average velocity with which charged particles, such as electrons, move in a conductor in the presence of an electric field. It is a very slow velocity due to frequent collisions with atoms in the material. Drift velocity is responsible for the flow of electric current in a circuit.
The drift velocity of free electrons in a conductor is directly proportional to the magnitude of the electric current flowing through the conductor. This means that as the current increases, the drift velocity of the electrons also increases. The relationship is described by the equation I = nAvq, where I is the current, n is the number density of charge carriers, A is the cross-sectional area of the conductor, v is the drift velocity, and q is the charge of the charge carrier.
electron ,Believe it is called a FREE electron. Because it is not internally bound to the nucleolus of the atom. in a conductive material , like copper, they are free to drift from one atom to another. if it was not for free electron's ,electricty(current) could not exist.
When a voltage is applied across a conductor, the electric field created exerts a force on the free electrons within the material. These electrons experience a net force in the direction opposite to the field, causing them to move with a steady drift velocity in that direction. Over time, a balance is achieved between the force due to the electric field and the resistance within the material, resulting in a constant drift velocity.
In an intrinsic semiconductor, a few electrons get thermally excited and break from their valence bond to become a free electron. This leaves behind a vacancy in its place called 'hole'. In a P-type semiconductor, B with 3 electrons replaces a Si atom with 4 electrons in the lattice. 3 covalent bonds are formed by B with 3 neighbouring Si. But there is a deficiency of one electron in B for bonding with the 4th Si. This deficiency/vacancy is called a hole. When an electric potential difference is present, the electrons from adjacent valence bond moves into the vacancy near it while moving along the potential. The following represents the movement of valence electron. Terminology: * represents valence electron _ represents hole A is -ve and B is +ve. ..I A * * * _ * * * B .II A * * _ * * * * B III A * _ * * * * * B .IV A _ * * * * * * B I- Hole is at the 4th position. II- At first, the 3rd electron from left shifts right to fill the vacancy and leaves behind a vacancy in its place. The vacancy is at the 3rd position. III- Next, the 2nd electron from left has shifted to the 3rd place and filled up that vacancy but leaves a vacancy at its place. The vacancy is at 2nd position. IV- Now, the 1st electron from left moves to occupy the vacancy at the 2nd position creating another vacancy in its own place. The vacancy is at 1st position. As the electrons moved right, the vacancy moved left. The vacancy is called a hole (just a shorter name for convenience). The movement of holes is really the movement of electron in the valence band. Therefore, the mobility of a hole is indirectly the mobility of valence electrons. Mobility is the velocity acquired per unit electric field. In the intrinsic and N type semiconductors, many free electrons are present i.e. electrons in conduction band which are free to move in the crystal as against valence electrons which can only move in the lattice points. When an electric field is applied, both the valence electrons and the free electrons move in the same direction. The hole direction is opposite to that of valence electron but the mobility is the same, as explained earlier. Even for the same electric field, valence electrons cannot move as freely as the free electrons because its movement is restricted. Therefore, the velocity of valence electrons is less compared to free electrons. In other words, the velocity of holes is less compared to free electrons. This means mobility is also less for a hole compared to free electron. Thus, mobility of a free-electron (often abbreviated as 'electron') is greater than that of a hole (indirectly referring to valence electron).
A free electron at rest in an electric field will experience a force due to the field and will accelerate in the direction of the electric field. The electron will gain kinetic energy and start moving in the direction of the force until it reaches a velocity where the force due to the field is balanced by other forces acting on the electron.
The Heisenberg Uncertainty Principle states that the product of the uncertainty in position and momentum is at least equal to h/4*pi. The momentum of the electron is equal to its mass multiplied by its velocity. Using the uncertainty principle, you can calculate an approximate lower limit for the velocity.
current flow in wire means electron move.when is conduct the electron move for the first positive cycle from 180 phase.then for negative half cycle it will move backward it means electron stay its position on both cycle just external force is applied to make the device operate and electron which are in wire.
The valence band electrons in a conductor are free to drift as an electron gas filling the conductor, in response to an electrical field imposed across the conductor/