Germanium

It can easily gain or lose up to 4 electrons, but at high energies it can lose many more (all the way to 32 leaving just a bare nucleus).

Germanium becomes a gas at approximately 2,300 degrees Celsius. At this temperature, germanium atoms have enough energy to break free from the solid lattice structure and enter the gaseous phase.

Yes, germanium can work as a semiconductor. It is used in electronic devices like diodes and transistors due to its semiconducting properties. Germanium was actually one of the first materials used in the development of semiconductor technology.

Germanium has 18 inner shell electrons.

The carrier mobility of p-type germanium typically ranges from around 200-500 cm^2/Vs.

Germanium is primarily obtained as a byproduct of zinc ore processing. It is extracted from the roasted zinc concentrate through a process of leaching and purification. Alternatively, germanium can also be recovered from coal ash or as a byproduct of refining copper and lead ores.

Gold would melt first as it has a lower melting point compared to germanium. Gold melts at 1,064 degrees Celsius, while germanium melts at 937.4 degrees Celsius.

Silicon is preferred over germanium in semiconductor applications because it has a higher melting point, better thermal stability, and can form a native oxide layer for insulation. Additionally, silicon has a wider bandgap, making it more suitable for high-temperature and high-power electronic devices.

Germanium crystal is used in certain electronics applications, such as transistors and diodes, due to its unique semiconducting properties. It has a high charge carrier mobility and is sensitive to infrared light, making it useful in infrared optics and sensors. Additionally, germanium is compatible with silicon-based technologies, allowing for integration into existing semiconductor processes.

The advantages of Si over Ge are:

=> Stable and strong material & crystal structure like diamond

=> Si has a wider bandgap than Ge

=> higher operating temperature (125-175 oC vs. ~85 oC) and thus become intrinsic at higher temp.

=> Si readily forms a native oxide (SiO2) high-quality insulator protects and "passivates" underlying circuitry helps in patterning useful for dopant masking.

=>Large variety of process steps possible without the problem of decomposition (as in the case of compound semiconductors)

=> Si is cheap and abundant

Yes, carbon, silicon, germanium, tin, and lead are all elements that belong to the same period on the periodic table, specifically, Period 4. They have similar outer electron configurations due to being in the same period, but each successive element down the group adds an extra electron shell.

Silicon is a more popular semiconductor than germanium due to factors such as its wider band gap, higher thermal stability, and better abundance in nature. Silicon also has better manufacturing processes and can operate at higher temperatures, making it more suitable for a wide range of electronic applications.

Copper is a metal and does not exhibit semiconducting properties like germanium and silicon. Germanium and silicon are semiconductors with a crystalline structure that allows for controlled conduction of electricity. This difference in atomic structure is what gives rise to their unique electrical properties.

Germanium has five naturally occurring isotopes ranging in atomic mass number from 70 to 76.

The number given in the periodic table is: 72,63

Silicon and germanium can form a covalent bond when they share electrons. This type of bond involves the sharing of electron pairs between the atoms to achieve a stable electron configuration. Covalent bonds are strong and result in both silicon and germanium atoms achieving a more stable state.

Germanium is a semiconductor, it means that electrons are relatively strongly attached to nuclei. As result its thermal properties change. Generally semiconductors have worse thermoconductivity than metals but better than insulators.

The valency of germanium is four. This means that germanium typically forms covalent bonds with other elements by sharing four electrons in order to achieve a stable electron configuration.

Germanium has 32 atoms.

The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.

To produce an n-type semiconductor, pure germanium can be doped with an appropriate impurity such as phosphorus or arsenic. These impurities introduce extra electrons into the germanium crystal structure, resulting in an excess of negative charge carriers (electrons) and hence an n-type semiconductor material.

Germanium has four valence electrons.

The formula for germanium arsenate is GeAsO4.

The knee voltage for germanium is around 0.2V because this is the point at which the diode starts conducting current in a forward bias condition. Below this voltage, the diode remains non-conductive. This specific value is determined by the band gap energy of germanium.

The formula for germanium(II) carbonate is GeCO3.

Germanium is a relatively light element compared to many others, with a density of about 5.323 g/cm3. It is heavier than elements such as carbon and silicon, but lighter than elements like lead and gold.