By leaving electrons from their orbit.
By use of p-type dopants, elements with 3 valence electrons.
An even amount on both sides of the valence band
thermal energy
Semiconductor in pure form (i.e. without doping) is called intrinsic or i-type semiconductor. The no of charge carrier in this case is determined by the materials itself only and not by the impurities. In an intrinsic semiconductor number of excited free electron is equal to the number of holes.
increases
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
intrinsic semiconductor is an un-doped semiconductor, in which there is no impurities added where as extrinsic semiconductor is a doped semiconductor, which has impurities in it. Doping is a process, involving adding dopant atoms to the intrinsic semiconductor, there by gives different electrical characteristics
Well intrinsic semiconductor is semiconductor crystal with no impurities in it. In intrinsic semiconductor the electrons in valence band(valence electrons) gain energy(due to thermal enegry) and break free into conduction band(means it become free electrons). As this electron breaks free, a vacancy is created in place of it. It is called as a hole. This hole has a positive charge. So current in semiconductor is due to flow of this free electrons and holes. But this current is very small in magnitude. The difference between free electrons and valenece electrons is that valence electrons are often bonded to other atoms in crystal. But free electrons can freely move throughout the crystal.
The mobility of electrons is always greater than holes. Only the number of electrons and holes would be same in an intrinsic semiconductor.
Semiconductor in pure form (i.e. without doping) is called intrinsic or i-type semiconductor. The no of charge carrier in this case is determined by the materials itself only and not by the impurities. In an intrinsic semiconductor number of excited free electron is equal to the number of holes.
increases
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
due to the poor conduction at room temperature,the intrinsic semiconductor as such,is not useful in the electronic devices.hence,the current conduction capability of the intrinsic semi conductor should be increased. this can be achieved by adding a small amount of impurity to the intrinsic semi conductor
intrinsic semiconductor is an un-doped semiconductor, in which there is no impurities added where as extrinsic semiconductor is a doped semiconductor, which has impurities in it. Doping is a process, involving adding dopant atoms to the intrinsic semiconductor, there by gives different electrical characteristics
Intrinsic semiconductor means pure form of semiconductor in this no addtition of impurity.but ext is not pure semicnductor,in this add the impurity which is p-type or n-type .Due to dopping,(adding impurity)excess electorn or photon created in crystal of atom creation of electron or photon depend on dopping material
The process of adding suitable impurities in the intrinsic semiconductor is called doping. The impurity added to the intrinsic semiconductor to increase its conductivity is called dopant. There are some methods of doping in case of a conductor.impurity atoms can be added to the intrinsic semiconductor in different ways discussed below:A very small quantity of impurity atoms is made by diffusing into the high purity molten material such as germanium when the crystal is grown out of melt.Impurity atoms can also be added into the intrinsic semiconductor by heating it in the environment having impurity atoms.Impurity atoms can also be added into the intrinsic semiconductor by bombarding it with the impurity atoms.
An intransic material is a material that have been used in doping process.There are two type of intrinsic material n type and p type.
silicon is intrinsic semiconductor until we add some impurities in it. the impurities are either of group 3 called acceptors which make p type or of group 5 called donors which make n type semiconductor.
Well intrinsic semiconductor is semiconductor crystal with no impurities in it. In intrinsic semiconductor the electrons in valence band(valence electrons) gain energy(due to thermal enegry) and break free into conduction band(means it become free electrons). As this electron breaks free, a vacancy is created in place of it. It is called as a hole. This hole has a positive charge. So current in semiconductor is due to flow of this free electrons and holes. But this current is very small in magnitude. The difference between free electrons and valenece electrons is that valence electrons are often bonded to other atoms in crystal. But free electrons can freely move throughout the crystal.
With the increase in temperature, the concentration of minority carriers starts increasing. Eventually, a temperature is reached called the critical temperature (85° C in case of germanium and 200° C in case of silicon) when the number of covalent bonds that are broken is very large and the number of holes is approximately equal to number of electrons. The extrinsic semiconductor now behaves essentially like an intrinsic semi-conductor.