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gm = d(ID)/d(VGS), where ID = drain current, and VGS = gate bias, with all other biases fixed and all biases referenced to the source voltage. gm is the measure of how much the drain current changes with an incremental change of VGS. Practically, you measure (ID, VGS) pairs at a fixed VDS for a range of VGS. Then gm at a certain (VGS=VGS1) is simply (ID2-ID1)/(VGS2-VGS1), where 1,2 signify consecutive pairs of (ID, VGS). In other words, you can plot ID versus VGS on an x-y plot with VGS being the x-axis. Whichever way you measure the slope at a certain (VGS=VGS1) on the curve is the gm value.

Please note that gm for an MOSFET is the same in definition.

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Q: Define the trans-conductance gm of a JFET?
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What is the inverse of transconductance?

Roughly speaking, resistance. Transconductance refers to the reciprocal of the amplifying device's internal resistance. The concept is particularly useful if the device is a voltage-controlled current source (tube or FET). In vacuum tube amplifiers, transconductance (Gm) is (u / Rp), where... u is the amplification factor. u= (Gm x Rp). Rp is the anode (drain) resistance. Rp is the internal resistance of the amplifying device. Gfs is synonymous with Gm. The reciprocal of Gm (or Gfs) is (Rp / u). Another term for this reciprocal is transresistance.


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