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when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons.
when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
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What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
How drain current is controlled in JFET?
The gate voltage controls the extent of depletion layer and thereby controls the width of the channel. As the width of the channel varies, current also varies. Width of the channel is inversly proportional to drain current.
What is the width of depletion region of tunnel diode?
0.1 micron
Why diode acts as insulator in reverse biasing?
a diode has two junctions one is doped with p-type and another is doped with n-type.a diode connected in reverse bias means that the n-channel is connected to the positive end of the battery and p-channel is attached to the negative end of the battery if we start increasing the reverse voltage the width of depletion region increases and the exchange of charge carriers (holes and electrons) is inhibited so we expect zero current in the circuit but on experimental observations we had confirmed that a small current (micro-amp) is observed due to the minority charge carriers(electrons in p-channel and holes in n-channel) present in the diode , for these minority charge carriers the applied voltage appers as as forward bias to them so they conduct . but on further increasing the reverse voltage we note a large change in the reverse current this is due to junction breakdown (the depletion region is broken , so there is no demarcation between p-channel and n-channel in the diode). the voltage at which this phenomena occurs is called 'break-down voltage'
Why Reduction in Depletion region width with increase in doping?
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
What effect of depletion layer by biasing?
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
How drain current is controlled in JFET?
The gate voltage controls the extent of depletion layer and thereby controls the width of the channel. As the width of the channel varies, current also varies. Width of the channel is inversly proportional to drain current.
How depletion region is narrowed during forward biasing?
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
Does depletion region width becomes zero?
Exactly in forward bias wen internal barrier potential is compensated by external voltage.,
How temperature effects depletion layer width?
as the temperature increases the width of depletion layer decreases
If the impurity concentration is increased how the depletion width effected?
depletion layer decreases
What is difference between early effect and punch through in BJT?
When we apply reverse bias voltage to input and output sides of a BJT, then the width of the depletion layer at emitter-base and base-collection got increased. Due to which the effective base width got decreased. This phenomenon of reduction in the base width is called Early effect. And if we go on increasing the Reverse bias voltage then at a time instant the width of the base becomes zero and this effect is called punch through effect and that reverse bias voltage is called punch through voltage.
What is breakdown voltage of diode?
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs is called the breakdown voltage.The breakdown voltage depends on the width of the depletion region, which, in turn, depends on the doping level. The junction offers almost zero resistance at the breakdown point.
How does doping effect the depletion layer in semiconductor?
Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.
What is the width of depletion region of tunnel diode?
0.1 micron
What is the thickness of the depletion layer in a semiconductor?
The thickness of the depletion region or depletion layer (and there are other terms) varies as the design of the semiconductor. The layers in a semiconductor are "grown" (usually by deposition), and this can be controlled. The typical depletion region thickness in an "average" junction diode is about a micron, or 10-6 meters. Junction "construction" presents major engineering considerations to those who design and make semiconductors as there are many different kinds. A link is provided to the section on the width of depletion regions in the Wikipedia article on that topic.
