as the temperature increases the width of depletion layer decreases
depletion layer decreases
Simple squamous
The average is 7 nanometres in width (from outside to inside the cell).
Volume is measured in 3 dimensions. e.g. Height x width x depth. 2.50 x 10 has no volume - it is a rectangle.
535meters in width of the new dome.
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
depletion layer decreases
Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.
The gate voltage controls the extent of depletion layer and thereby controls the width of the channel. As the width of the channel varies, current also varies. Width of the channel is inversly proportional to drain current.
The thickness of the depletion region or depletion layer (and there are other terms) varies as the design of the semiconductor. The layers in a semiconductor are "grown" (usually by deposition), and this can be controlled. The typical depletion region thickness in an "average" junction diode is about a micron, or 10-6 meters. Junction "construction" presents major engineering considerations to those who design and make semiconductors as there are many different kinds. A link is provided to the section on the width of depletion regions in the Wikipedia article on that topic.
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
0.1 micron
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
in forward biasing depletion region width decreases and in reverse biasing it increases .
hey dear, in p-n junction p-type material has more positive charged called holes and n-side having e-in majority... when we apply negative biasing then negative terminal is connected to p terminal then holes are attracted by negative terminal and e's are attracted by positive terminals.....and minority carries are forced towards junction, then at junction electron and hole pair generation occurs. after this at junction charge is accumulated by attraction and junction is get wider by a small amount that is called as depletion layer...... now you can understand how depletion layer is created..
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Exactly in forward bias wen internal barrier potential is compensated by external voltage.,