The integration of the electric field across the depletion region is what develops the barrier voltage.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
ginago
No, we don not consider the barrier voltage of a diode to be able to act as a voltage source. The barrier voltage arises during construction of the p-n junction, and it results from charge separation. Separating charges results in voltage, but this difference of potential cannot be tapped as a voltage source because it cannot supply current the way we understand conventional voltage sources are able do.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
0.7
ginago
No, we don not consider the barrier voltage of a diode to be able to act as a voltage source. The barrier voltage arises during construction of the p-n junction, and it results from charge separation. Separating charges results in voltage, but this difference of potential cannot be tapped as a voltage source because it cannot supply current the way we understand conventional voltage sources are able do.
When sufficient forward voltage is applied across the junction, the electric field opposing the further diffusion of electrons from n-type to p-type semiconductor gets lost. The electric field created due to the application of the forward voltage opposes that of the barrier potential and finally vanishes the barrier completely.
(A) The bias battery voltage (B) 0V (C) the diode barrier potentiaol (D) The total circuit voltage
To use your left hand to determine the direction of the voltage developed in moving conductor place your forefinger in the direction of the lines of force. Fleming developed this hand rule.
zener cut in voltage
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.