The integration of the electric field across the depletion region is what develops the barrier voltage.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
ginago
No, we don not consider the barrier voltage of a diode to be able to act as a voltage source. The barrier voltage arises during construction of the p-n junction, and it results from charge separation. Separating charges results in voltage, but this difference of potential cannot be tapped as a voltage source because it cannot supply current the way we understand conventional voltage sources are able do.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
The breakdown voltage is greater than the barrier potential because it represents the voltage at which a significant increase in current occurs due to the breakdown of the insulating properties of a material, such as a diode or semiconductor junction. While the barrier potential is the voltage required to overcome the energy barrier for charge carriers to cross the junction, breakdown voltage indicates the point at which the electric field becomes strong enough to ionize atoms or create charge carriers, leading to a dramatic increase in conduction. Thus, the breakdown voltage must exceed the barrier potential to initiate this avalanche of charge carriers.
0.7
ginago
No, we don not consider the barrier voltage of a diode to be able to act as a voltage source. The barrier voltage arises during construction of the p-n junction, and it results from charge separation. Separating charges results in voltage, but this difference of potential cannot be tapped as a voltage source because it cannot supply current the way we understand conventional voltage sources are able do.
To use your left hand to determine the direction of the voltage developed in moving conductor place your forefinger in the direction of the lines of force. Fleming developed this hand rule.
(A) The bias battery voltage (B) 0V (C) the diode barrier potentiaol (D) The total circuit voltage
zener cut in voltage
When sufficient forward voltage is applied across the junction, the electric field opposing the further diffusion of electrons from n-type to p-type semiconductor gets lost. The electric field created due to the application of the forward voltage opposes that of the barrier potential and finally vanishes the barrier completely.