0.7
The integration of the electric field across the depletion region is what develops the barrier voltage.
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
Exactly in forward bias wen internal barrier potential is compensated by external voltage.,
There is really no relation.
The relation between amperage and capacitance is that amperage is equals to capacitance times the rate of voltage change over time. This voltage refers to instantaneous voltage.
zener cut in voltage
Your question is unclear. But, if you are asking what the relationship between voltage and the distance between conductors is, then the higher the voltage, the greater the distance must be.
voltage depend on current and resistance r.p.m depend on no of pole
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
voltage and frequency both are different quantity.. don't mix it...
Vrms=1.414xVpk to pk
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V