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Zin=Vds/Id [Vds=drain to source voltage ; Id = drain current]
The Junction Field Effect Transistor (JFET)exhibits characteristics which often make it more suited to a particular application than the bipolar transistor. Some of these applications are: - High Input Impedance Amplifier - Low-Noise Amplifier - Differential Amplifier - Constant Current Source - Analogue Switch or Gate - Voltage Controlled Resistor
since in an FET the value of the current depends upon the value of the voltage applied at the gate and drain...so it is known as voltage controlled device.. for example..in a mosfet..the current from drain to source depends upon the width of the depletion layer..which in turn depends upon the voltage applied on the gate.. so that is the reason
Remains constant
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
A FET (Field Effect Transistor) is mainly used when the input signal needs to be isolated from the output. A FET has a very high input resistance, so very little current is required from the input. Voltage gain is not the main objective when using a FET.
the final stage of a power amp is a current amplifier in a bipolar design and a voltage amp in a FET design.
Zin=Vds/Id [Vds=drain to source voltage ; Id = drain current]
fet is a voltage controlled device...cut off voltage in fet refers to that voltage of the gate - source junction at which the current flow through channel is zero
fet is a voltage controlled device...cut off voltage in fet refers to that voltage of the gate - source junction at which the current flow through channel is zero
The small signal model for the common source FET can be used for analysing the basic FET amplifierconfigurations:(i)common source(CS),(ii)commondrain(CD) or source follower,and(iii)common gate(CG). The CS amplifier which provides good voltage amplification is most frequentlyused.The CD amplifier with high input impedance andnear-unity voltage gain is used as a buffer amplifier and the CG amplifier is used as a high frequencyamplifier.The small signal current-sourcemodel for the FET in CS configuration and the voltage source model can be derived by finding the Thevenin'sequivalent for the output part of amplificationfactor,drain resistance andtransconductance/mutual conductance of the FET.
It can be answered in two ways : 1. ratio of output & input voltages [Vout / Vin] i.e Drain voltage(Vds)/Source voltage(Vs). 2. multiplication of trans-conductance & drain resistance .
FET
Due to high input impedence curret gain is high
The Junction Field Effect Transistor (JFET)exhibits characteristics which often make it more suited to a particular application than the bipolar transistor. Some of these applications are: - High Input Impedance Amplifier - Low-Noise Amplifier - Differential Amplifier - Constant Current Source - Analogue Switch or Gate - Voltage Controlled Resistor
JFET BFW20 shows negetive resistance when gate is grounded (VGS = 0) and vary Drain to source voltage and measure Drain current. As the voltage is increased, the drain current decreases. Prof.S.Lakshminarayana.
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.