The base current of the emitter current is smaller.
by increasing the emitter current
The percentage of doping in emitter is higher than collector region.hence large current is flow to emitter than collector.
The percentage of doping in emitter is higher than collector region.hence large current is flow to emitter than collector.
on or off
If emitter-base is reverse biased then there will be no amplification effect on collector-emitter. If collector-base is forward biased, it will act like a diode, but without emitter-base current, that is meaningless.
DC current gain is collector-emitter current divided by base-emitter current. In linear mode, gain is beta, or hFe. In saturation mode, however, the transistor is over-driven and you can no longer relate collector-emitter current to base-emitter current. The transistor operates like a switch, and collector-emitter current is a function of voltage and load impedance only. (Ignoring the relatively small voltage drop.) To maintain saturation mode, the collector-emitter current must be smaller than the base-emitter current times hFe. Often, it is several times smaller, because hFe can vary from transistor to transistor, and your design must account for this variability.
Small is relative term, current gain of the transistor decides how small base current would be than collector current. Most of the emitter current of electrons diffuses through the thin base into the collector. Moreover, modulating the small base current produces a larger change in collector current.Small is relative term, current gain of the transistor decides how small base current would be than collector current. Most of the emitter current of electrons diffuses through the thin base into the collector. Moreover, modulating the small base current produces a larger change in collector current.Small is relative term, current gain of the transistor decides how small base current would be than collector current. Most of the emitter current of electrons diffuses through the thin base into the collector. Moreover, modulating the small base current produces a larger change in collector current.
In the common emitter amplifier, an increase of base-emitter current causes a larger increase of collector emitter current. This means that, as the base voltage increases, the collector voltage decreases. This is a 180 degree phase shift.
Emitter current is the sum of collector current & base current , hence the largest. Base current is the smallest.
In a common emitter amplifier, the base-emitter current causes a corresponding collector-emitter current, in the ratio of hFe (beta gain) or collector resistance over emitter resistance, which ever is less. Since this ratio is usually greater than one, the differential collector current is greater than the differential base current. This results in amplification of the base signal. As you increase the base-emitter current, the collector-emitter current also increases. This results in the collector being pulled towards the emitter, with the result that the differential collector voltage decreases. This results in inversion of the base signal.
Consider that current flow "enters" at the emitter and "exits" at the collector and base. Now, IE = IB + IC. Alternately, current "enters" at the collector and the base, and "exits" at the emitter. Now, IE = IB + IC
# parameter are usually the base current ib,collector current ic,emitter current ie,collector emitter voltagevce,base emitter voltagevbe,collector base voltagevcb which decide the operation &output of the transistor
as the base current is very small compared to the emitter current,the collector current is nearly equal to the emitter current..
as the base current is very small compared to the emitter current,the collector current is nearly equal to the emitter current..
by increasing the emitter current
Common base transistor if the emitter is open current Ie=0 but a small collector current thus exist.this current is reversed biased collector to the base voltage it is represented by Icbo while common emitter is d base terminal is open circuit and the base junction is reversed biased current Icbo flow from the tcollector to the emitter in the external circuit this current is called leakage current.
The percentage of doping in emitter is higher than collector region.hence large current is flow to emitter than collector.