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Why potential across pn junction is called potential barrier?
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
What is the typical value of the barrier potential for a germanium diode?
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
Which is greater the breakdown voltage or the barrier potential?
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
What is the energy barrier?
The energy barrier is the minimum amount of energy required for a chemical reaction to occur. It represents the energy difference between the reactants and the transition state of the reaction. Overcoming this barrier allows the reaction to proceed.
Why can't the potential barrier of a diode be used as a voltage source?
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
Is barrier potential temperature dependent?
Yes, the barrier potential in a semiconductor diode is temperature dependent. As temperature increases, the barrier potential decreases due to changes in the band gap energy and carrier density, leading to increased leakage current. Conversely, as temperature decreases, the barrier potential increases, reducing the leakage current.
Compare the characteristics of a silicon and germanium diode?
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
What happen to barrier potential when temperature increases?
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
What happens to the barrier potential when the temperature increases?
When the temperature increases, the barrier potential in a semiconductor diode decreases. This is due to the increase in carrier density at higher temperatures, which results in more charge carriers being available to pass through the barrier. Ultimately, this leads to a lower resistance across the diode and a decrease in the potential barrier.
What happens when a wave encounters a solid barrier?
When a wave encounters a solid barrier, it can be reflected, absorbed, or diffracted around the barrier. The type of interaction depends on the wavelength and the nature of the barrier. Reflection occurs when the wave bounces off the barrier, absorption happens when the barrier absorbs the wave's energy, and diffraction occurs when the wave passes around the barrier and continues in a different direction.
What are forward and reverse bias?
Forward bias is when the height of the depletion layer is reduced such that a greater number of majority charge carriers have sufficient energy to overcome the potential barrier while revers bias is when the height of the potential barrier is increased so that very few majority charge carriers have sufficient energy to surmount the potential barrier. All the above phenomena takes place when a potential barrier is applied across the pn junction.
What is the potential barrier of germanium?
The potential barrier of germanium is typically around 0.3 to 0.7 electron volts (eV) when used as a semiconductor in electronic devices. This barrier helps control the flow of current in the material and is crucial for its behavior as a semiconductor.
