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Does drift current depends on carrier concentration?
no,drift current depends upon electric field where as carrier concentration lead to diffusion current
How do you Define the mobilty of charge carrier?
I am assuming the charge carries are electron and hole in an semiconductor. the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor. the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen. in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
How intrinsic semiconductor can be made into extrinsic semiconductor?
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
What is the difference between conductivity and mobility?
conductivity and mobility both are directly propertional
Why mobility of holes is greater than mobility of electron?
electrons have less effective size than that of holes(which actually are not real)...formula says m(mobility)=drift velocity/electric field=et/m where t is relaxation time.. so mobility is inversely proportional to mass hence e has more mobility.
Derive the equation of mobility carrier?
help plzz
What are the SI units of concentration?
There are no units of concentration. Concentration is written as density, which requires a mass measurement, and a volume measurement. The standard units for this is grams per liter.
Does drift current depends on carrier concentration?
no,drift current depends upon electric field where as carrier concentration lead to diffusion current
Where could I get a shower which is specially adapted for those with limited mobility?
Freedomshowers.com has many different shower units to suit the needs of someone with limited mobility. They will send you a free brochure featuring all the shower units.
Who makes Bryant central air units?
carrier
Proceeds Against a concentration Gradient requires a carrier?
Solute pump
Does osmosis require a carrier?
NO. Osmosis( by definition) is the DIFFUSION of water from a high concentration gradient to a low concentration gradient across a semipermeable membrane. As diffusion is a form of passive transport, it doesnt require a carrier
What companies sell a scooter carrier?
Retailers and companies that sell scooter carriers include: Discover My Mobility, Discount Ramps, Mobility-Scooters, Scooter Link, Manta, and Best Buy Dealer.
What are responsible for the transport of substances down a concentration gradient during facilitated diffusion?
Carrier proteins.
What is intrinsic concentration?
in an undoped semiconductor, the number of carrier available per unit volume for conduction is the intrinsic carrier concentration. These are the loosley bonded outermost electrons of the parent atom which can be freed at room temperature hence both type of carrier (n and p) are equally present in the specimen.
What moves up a concentration gradient and requires a carrier?
Primary Active Transport.
How do you Define the mobilty of charge carrier?
I am assuming the charge carries are electron and hole in an semiconductor. the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor. the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen. in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
