in an undoped semiconductor, the number of carrier available per unit volume for conduction is the intrinsic carrier concentration. These are the loosley bonded outermost electrons of the parent atom which can be freed at room temperature hence both type of carrier (n and p) are equally present in the specimen.
if the donor consecration ( nd )is much larger than the intrinsic concentration( ni )then n0=nd when n0 is the thermal equilibrium concentration of free electron so : nopo=ni2 (when p0 is the thermal equilibrium concentration of holes ) po=ni2/nd do some basic math we got nd=ni2/po
Intrinsic
intrinsic impedance is ratio of E/H from a uniform plane ve in a materal
due to the poor conduction at room temperature,the intrinsic semiconductor as such,is not useful in the electronic devices.hence,the current conduction capability of the intrinsic semi conductor should be increased. this can be achieved by adding a small amount of impurity to the intrinsic semi conductor
40 -60
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
Intrinsic - A perfect semiconductor (ex: silicon) crystal with no impurities or lattice defects is called an intrinsic semiconductorExtrinsic - an extrinsic material is achieved by introducing impurities into the intrinsic material described above, such as doping silicon with boron atoms, such that the equilibrium carrier concentrations are different from the intrinsic carrier concentration.
germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v built in potential of germanum is 0.3v. 1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3. 2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.
p = ni^2/n
if the donor consecration ( nd )is much larger than the intrinsic concentration( ni )then n0=nd when n0 is the thermal equilibrium concentration of free electron so : nopo=ni2 (when p0 is the thermal equilibrium concentration of holes ) po=ni2/nd do some basic math we got nd=ni2/po
Intrinsic
Intrinsic refers to the doping -- intrinsic semiconductors are not doped. Whether compound or not, if they are not doped they are intrinsic.
For acids, "weak" and "strong" have nothing to do with concentration. They're intrinsic properties of the specific acid. So that part of the question is unanswerable. Whether it would be harmful or not also depends on the acid. Acetic acid at that concentration is very dilute vinegar. Prussic acid at that concentration is highly toxic.
intrinsic property
solubility an intrinsic property
I believe that is an intrinsic property.
Intrinsic(inherent,or inborn)evil.