germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v
built in potential of germanum is 0.3v.
1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3.
2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
)silicon has got less leakage current 2)high threshold voltage (to avoid unwanted triggering of the device from noise) 3)more adhesive to aluminum
Potential energy is pretty much the potential for kinetic energy. The less kinetic energy there is, the more potential... On the other hand, if you need gravitational potential energy, then the higher the object is placed above the ground, the more GPE it has.
It isn't so. Potential energy can be greater, or less, for a given object, depending on its position and its speed.
There is less gravity on the Moon. Gravitational potential energy can be calculated by multiplying weight x height, or the equivalent mass x gravity x height.
silicon is less sensitive towards temperature.It costs low compared to germanium,
because lekage current of silicon is less than germenium
Germanium is costly, less abundant and there aren't as many feasible processes for it as compared to Si for fabrication.
the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
Silicon is actually preferred to germanium within the manufacture of semiconductor devices due to the following reasons:Silicon is cheap and abundantIn silicon, leakage current is less affected by temperature as compared to germanium.The leakage current in silicon is very very small as compared to germanium.The working temperature of silicon is more than that of germanium. The working junction temperature of silicon can go as high as 150C whereas the working junction temperature of germanium can only go as high as 60CSilicon dioxide is a stable insoluble solid that can be used both to electrically insulate circuitry and to passivate junctions preventing contamination (allowing use of inexpensive plastic packages), germanium dioxide is a crumbly water soluble solid (this requires all germanium devices to be packaged in expensive metal or glass hermetically sealed cases and making germanium integrated circuits almost impossible)
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
)silicon has got less leakage current 2)high threshold voltage (to avoid unwanted triggering of the device from noise) 3)more adhesive to aluminum
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.
The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.
Carbon, silicon, germanium are all teravalent atoms (4 electrons in the outer shell). Each element becomes heavier, and (because there are more total electrons) is less "pure" in it's chemical (and electrical) responses.