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germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v

built in potential of germanum is 0.3v.

1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3.

2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.

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Q: Why germanium has less barrier potential than silicon?
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Can you explain why silicon and germanium are used in the manufacturing of semiconductors?

silicon is less sensitive towards temperature.It costs low compared to germanium,


Why you use silicon not germanium in SCR?

because lekage current of silicon is less than germenium


Why germanium is less used than silicon?

Germanium is costly, less abundant and there aren't as many feasible processes for it as compared to Si for fabrication.


Why don't use germanium in silicon controlled rectifier?

the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)


What is the threshold voltage of silicon and germanium?

In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.


Why would you use silicon diodes instead of germanium?

Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.


Why is silicon is preferred is germanium?

Silicon is actually preferred to germanium within the manufacture of semiconductor devices due to the following reasons:Silicon is cheap and abundantIn silicon, leakage current is less affected by temperature as compared to germanium.The leakage current in silicon is very very small as compared to germanium.The working temperature of silicon is more than that of germanium. The working junction temperature of silicon can go as high as 150C whereas the working junction temperature of germanium can only go as high as 60CSilicon dioxide is a stable insoluble solid that can be used both to electrically insulate circuitry and to passivate junctions preventing contamination (allowing use of inexpensive plastic packages), germanium dioxide is a crumbly water soluble solid (this requires all germanium devices to be packaged in expensive metal or glass hermetically sealed cases and making germanium integrated circuits almost impossible)


Why FET produces less noise than BJT?

because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium


Why Silicon transistor are preferred to germanium transistors?

)silicon has got less leakage current 2)high threshold voltage (to avoid unwanted triggering of the device from noise) 3)more adhesive to aluminum


Why is the reverse saturation current of germanium diode more than silicon?

Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.


What is represented by 'A' in 'OA79' diode?

The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.


What is difference between silicon and germenium?

Carbon, silicon, germanium are all teravalent atoms (4 electrons in the outer shell). Each element becomes heavier, and (because there are more total electrons) is less "pure" in it's chemical (and electrical) responses.