germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v
built in potential of germanum is 0.3v.
1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3.
2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.
Silicon transistors are preferred to germanium transistors because they exhibit higher thermal stability and are less prone to temperature variations. Silicon transistors also have a higher maximum operating temperature, improved frequency response, and are more reliable in terms of long-term performance. Additionally, silicon is more abundant and easier to work with in manufacturing processes compared to germanium.
Germanium has higher electron and hole mobilities compared to silicon, making it more sensitive to small magnetic fields in Hall effect experiments. Additionally, germanium has a lower bandgap energy, which allows for the Hall voltage to be easily measured at room temperature. Silicon, on the other hand, has a higher bandgap energy leading to less sensitivity in detecting small magnetic fields.
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
Silicon diodes have a higher forward voltage drop (~0.7V) compared to germanium diodes (~0.3V). Silicon diodes have higher temperature stability and are more commonly used in modern electronic devices, while germanium diodes are more sensitive to temperature changes and are less commonly used.
Germanium is a semiconductor, it means that electrons are relatively strongly attached to nuclei. As result its thermal properties change. Generally semiconductors have worse thermoconductivity than metals but better than insulators.
silicon is less sensitive towards temperature.It costs low compared to germanium,
products made by silicon are more stable than those made by germanium
The temperature sensitivity of silicon is less than germanium because silicon has a wider energy band gap than germanium. This wider band gap allows silicon to operate more efficiently at higher temperatures, resulting in less temperature-dependent changes in its electrical properties compared to germanium. Additionally, silicon has a higher thermal conductivity than germanium, which helps dissipate heat more effectively, reducing temperature effects on its performance.
because lekage current of silicon is less than germenium
A germanium atom with 2 less protons would be an atom of silicon. Silicon has an atomic number of 14, while germanium has an atomic number of 32. By removing 2 protons from germanium, you end up with an atom with an atomic number of 30, which corresponds to silicon.
the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)
Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.
Germanium is less commonly used in electronic devices than silicon due to its higher cost and lower abundance. Silicon is also more stable at higher temperatures, making it more reliable for a wider range of applications. Additionally, silicon has better electrical properties and can form a native oxide layer which helps with device performance.
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
Carbon, silicon, germanium are all teravalent atoms (4 electrons in the outer shell). Each element becomes heavier, and (because there are more total electrons) is less "pure" in it's chemical (and electrical) responses.
No, silicon and germanium are not always used in alloys. Silicon is commonly used in alloys, such as in aluminum-silicon alloys. Germanium is less commonly used in alloys due to its high cost and limited availability compared to other alloying elements.
Silicon has a higher operating temperature and greater thermal stability compared to germanium. Silicon has a larger bandgap energy which makes it better suited for high-power applications. Germanium has a higher electron mobility which can result in faster transistors, but it is less commonly used in modern semiconductor devices.