The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Potential barrier is the obstacle created by the depletion layer which prevents majority charge carriers from flowing across the pn junction freely
with the will of the God
potential barrier built up
It is called a roadblock.
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
in correct sense it is not the layer but the region around the metallurgical junction which is depleted of charge carriers .in this region an internal electric field exist which counter balance the diffusion of electron and hole around the junction . basically the main reason for the formation of depletion region is the concentration gradient across metallurgical junction of p-n semiconductor.
zener cut in voltage
The forward voltage at which the current through the junction starts increasing rapidly, is called the knee voltage or cut-in voltage.
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
It is called a roadblock.
when the p type semi conductor is connected to n type the electrons in n type migrates towards p type to fill the vacancy i.e holes in p type. As a result accepter ions are developed in n type and donor ions in p type which restrict further movement of electrons and holes . this layer of donor and accepter ions at the pn-junction is called depletion region. and across this region a potential is developed which is called barrier potential.
In semiconductors, the relationship between the flow of electrical current and electrostatic potential across a p-n junction depends on a characteristic voltage called the thermal voltage, denoted VT.
Acetylcholine
When two dissimilar metals come into contact as in the case of copper and ferrous due to diffusion electrons get migrated right from one to the other and so a potential of the order of few volts is created. This is called junction potential. This plays an important role in giving thermo emf for a thermo couple
Action Potential
Gap junction
Making a circuit? Sorry, but its not entirely clear from your question what you are asking about. Also depending on battery voltage and polarity, the junction may or may not be destroyed.
the reason for 0.3V as barrier potential in Ge is:- Electrons near the junction drift into the P region and recombine with holes. At the junction, the P-side has a layer of negative charges or negative ions (since p-type material is electrically nuetral addition of an electron makes it a negative ion). At the junction, the N-side has given up electrons thus creating holes i.e. it has positive charges or positive ions.This ion build up creates an area that is depleted of any conduction electrons or holes i.e. it has positive charges or positive ions cancelled out by negative charges or negative ions This ion build up creates an area that is depleted of any conduction electrons or holes. This represents a potential difference of 0v to 0.3v volts Ge diodes Semiconductor devices are controlled by controlling the depletion region of the device. The potential difference is called the barrier potential. It's basically what makes the semiconductor work, so its a really good question.
demountable barrier
This is the definition of "resting potential".