if a diode is in forward biased the diode acts as switch is on and when we apply the diode in reverse biased then it work as the switch as off.
transitor
as a material, nothingas a device to perform the function, vacuum tubes or magnetic amplifiers
electronic circuits are those which deals with flow of electrons. in general electronic devices are categorized based on the flow of e as conductor, insulator and semiconductor. since resistor resists the flow of electrons (it deals or works with electrons), it is consider as an electronic device.
Power FET
Transistor is a semiconductor device used for amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit.
A bicrystal is a semiconductor or similar device incorporating a junction of two crystals.
Any semiconductor device...eg: A transistor.
Majority charge carriers in the N-type side of a semiconductor material are electrons, because N-type semiconductor is doped with a material with 5 valence electrons. Semiconductor materials have 4 valence electrons and hold tightly to 8, so there is a "loose" electron for every atom of dopant. Therefore most of the charge carriers available are electrons. IE, electrons are the majority charge carriers. Minority charge carriers in N-type semiconductor are holes. Only a few holes (lack of an electron) are created by thermal effects, hence holes are the minority carriers in N-type material. The situation is reversed in P-type semiconductor. A material having only 3 valence electrons is doped into the semiconductor. The semiconductor atoms have 4 valence electrons try to hold tightly to 8, so there is a virtual hole created by a "missing" electron in the valence orbit. This acts as if it were a positive charge carrier. Most of the charge carriers are these holes, therefore in P-type semiconductor holes are the majority charge carrier. Again, reverse situation to minority charge carriers. Some electrons are loosened by thermal effects, they are the minority charge carriers in P-type semiconductor.
as a material, nothingas a device to perform the function, vacuum tubes or magnetic amplifiers
electronic circuits are those which deals with flow of electrons. in general electronic devices are categorized based on the flow of e as conductor, insulator and semiconductor. since resistor resists the flow of electrons (it deals or works with electrons), it is consider as an electronic device.
a transistor is called a Bi-polar device because in this we use both p-type semiconductor and n-type semiconductor. In p-type semiconductor the current flows with the help of holes(deficiency of an electron or we can say it as a positive charge). while in n-type semiconductor the current flows with the help of electrons(negatively charged particles). so the total current is due to both kind of charge carriers. that's why it is known as a Bi-polar device.
there are several type of electronics devices and several type of material used for these devices but material which is used for device should able to full fill the requirement of that device. for instance rectifier diode - Silicon Photo Diode - Germanium High Frequency devices - GaAs, InGaAs, GaP etc. Every material has it's own configuration so conclusion is that any one semiconductor material can not used as universal material for all semiconductor devices.
N is the type of semiconductor, MOS refers to Metal Oxide Semiconductor device.
A diode is a semiconductor device which allows current to flow in only one direction, thru its P-type and N-type junction. When current flows thru an LED, electrons strike material which releases photons, causing visible light to be emitted. See link.
A diode is a semiconductor device which allows current to flow in only one direction, thru its P-type and N-type junction. When current flows thru an LED, electrons strike material which releases photons, causing visible light to be emitted. See link.
N is the type of semiconductor, MOS refers to Metal Oxide Semiconductor device.
Power FET
A p-n junction (or a metal-semiconductor junction) with rectifying behaviour is an electronic device which allows a one-way only current flow (between the two semiconductor regions, or between the metal and the semiconductor). An ohmic contact in a metal-semiconductor junction is realized by lowering the potential barrier (allowing electrons to easily migrate into the metal) and by increasing the doping levels in the semiconductor (more than 10^18 cm^-3): this way the potential barrier, that should stop electrons from migrating into the semiconductor, is confined in a very small region making it possible for electrons with low energy to pass through it (tunneling effect). This means that in a ohmic contact current can flow both ways; such a device apparently works like a resistor with a low resistance, hence the "ohmic contact" name.