For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
cut in vge si .6&ge 0.2
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
Ge and si are not used for Making led's because these two emitts less amount in form of light and larger amount in form of heat.
cut in vge si .6&ge 0.2
for germanium it is 0.3 and for silicon it is 0.7
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
Ge
Mg. I is a non-metal and Si and Ge are metalloids.
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.