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MOSFET is Metal Oxide Semiconductor Field Effect Transistor. IGFET Insulated Gate Field Effect Transistor. But these expressions are practically synonyms.
The use of substrate in Field Effect Transistors is for it to serve as insulating material between the gate and the source.
Field Effect Transistor A: basically a silicon bar where the conduction is controlled by a field since there is no connection to the gate the impedance is very high
Its a Transistor used in JFET (Junction Field Effect Transistor)
An ordinary junction transistor consists of two junctions. In effect a variation of the base to emitter current influences the reverse leakage current at the base to collector junction. The base being common to both junctions. A Field Effect Transistor uses an electric field to narrow the conductive channel thus varying its resistance. A FET has an extremely high input resistance compared with that of a standard junction transistor.
The transistor was created by researchers at the university of Geneva. "The first patent for a field-effect transistor principle was filed in Canada... 1925. In 1934 German physicist Dr. Oskar Heil patented another field-effect transistor."
FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
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There are two types of field effect transistors:junction field effect transistors andmetal-oxide semiconductor field effect transistors.
Metal Oxide Semiconductor Field Effect Transistor
FET stands for field-effect transistor.
Thermionic valve