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What is the effect on threshold voltage of a mos capacitor on increasing substrate doping concentration?
Wiki User
∙ 13y ago
The threshold voltage will be increased (in case of an N-Mos), because the charge in the depletion region formed under the channel will be more (high density) and hence gate voltage has to overcome this charge for strong inversion.
Vt = (work function difference of gate and substrate) + 2*(substrate Fermi voltage) + (Qd/Cox)
Where, Qd = charge in Depletion region in Coulomb
Cox = Oxide capacitance
Wiki User
∙ 13y ago
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