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The energy band gap of germanium is approximately 0.67 electronvolts (eV). This means that it requires this amount of energy to move an electron from the valence band to the conduction band in germanium.

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Q: What is the energy band gap of germanium?
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What is the energy band gap for germanium?

The energy band gap for germanium is around 0.67 electron volts (eV) at room temperature. This makes germanium a semiconductor with properties in between those of conductors and insulators.


What is the energy band of germanium?

Germanium has an indirect band gap of approximately 0.7 electronvolts at room temperature. It is a semiconductor material with a crystalline structure that allows for the manipulation of its electronic properties in various electronic devices.


What is a difference between forbidden energy gap depletion region in semiconductor?

The forbidden energy gap is the energy difference between the valence band and the conduction band in a semiconductor, representing the energy needed for an electron to move from the valence band to the conduction band. The depletion region is a region near the junction of a semiconductor device where there are no free charge carriers. In this region, the forbidden energy gap plays a role in creating a potential barrier that prevents the flow of current.


According to band theory mg is an insulator while in practice it is a conductor why?

In band theory, Mg is predicted to be an insulator due to its full valence band and empty conduction band separated by a large band gap. However, in practice, Mg can conduct electricity due to the presence of defects or impurities that introduce additional energy levels within the band gap, allowing electrons to move and conduct electricity. These defects create electronic states within the band gap, leading to Mg exhibiting conductivity in practice despite its theoretical classification as an insulator.


What is the narrow-band semiconductor?

A narrow-band semiconductor is a type of semiconductor material with a small energy gap between its valence band and conduction band. This small energy gap allows for electrons to move easily between the bands, making it suitable for applications such as optoelectronics and telecommunications.

Related questions

Why silicon has more barrier potential than germanium?

Silicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.


What is the band gap of germanium?

.3 ev


The gallium arsenide is prepared for laser action but silicon and germanium are not. explain why?

I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.


Why the breakdown voltage of silicon is 0.7V whereas for germanium it is 0.3V?

because germanium has lower energy gap between conduction and valence bands


Energy Band gap value for calcium carbonate and barium carbonate?

Energy Band gap value for calcium carbonate and barium carbonate?


What is a difference between forbidden energy gap depletion region in semiconductor?

The forbidden energy gap is the energy difference between the valence band and the conduction band in a semiconductor, representing the energy needed for an electron to move from the valence band to the conduction band. The depletion region is a region near the junction of a semiconductor device where there are no free charge carriers. In this region, the forbidden energy gap plays a role in creating a potential barrier that prevents the flow of current.


Why do we mostly use indirect semiconductors?

The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.


What are the difference between direct and indirect band gap materials?

In a direct band gap the electron only needs energy to jump to the conduction band. In an indirect band an electron needs energy and momentum to jump to the conduction band


What makes silicon a semiconductor?

Silicon is a semiconductor because it has four valence electrons in its outer shell, allowing it to easily form a crystalline structure. This structure enables silicon to conduct electricity better than an insulator but not as well as a conductor, making it suitable for use in electronic devices. Additionally, doping with other elements can further enhance its conductivity.


Why energy gap is more in silicon than germanium?

in kJ/mol 1st 786.3 2d 1576.5 3d 3228.3 4th 4354.4


What is the band gap energy in si and ge?

at 300 Kelvin, silicon band gap is 1.11 eV, Germaium band gap is 0.66 eV.source: hyperphysics.phy-astr.gsu.edu/hbase/Tables/Semgap.html


What is the energy band gap of barium titanate?

The energy band gap of barium titanate is approximately 3.2 electron volts (eV). This wide band gap makes barium titanate a good candidate for various applications in electronics and optoelectronics.