in kJ/mol
1st 786.3
2d 1576.5
3d 3228.3
4th 4354.4
The temperature sensitivity of silicon is less than germanium because silicon has a wider energy band gap than germanium. This wider band gap allows silicon to operate more efficiently at higher temperatures, resulting in less temperature-dependent changes in its electrical properties compared to germanium. Additionally, silicon has a higher thermal conductivity than germanium, which helps dissipate heat more effectively, reducing temperature effects on its performance.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
Silicon has 14. Germanium has 32. You figure it out.
Germanium diodes are more expensive than silicon ones, germanium is harder to process, germanium cannot be used to make integrated circuits (while early prototype integrated circuits were germanium the wiring between the integrated components cannot be integrated making it too expensive for production), germanium cannot operate with a junction temperature above 60C (silicon will operate up to 150C), and its reverse leakage current is greater. However! Germanium diodes have a lower forward voltage drop than silicon ones do, so they're better for some applications, like radio frequency detection.
Silicon is more stable than germanium primarily due to its larger bandgap and stronger covalent bonding characteristics. The tetrahedral bonding structure of silicon allows for a more robust lattice arrangement, making it less susceptible to defects and thermal instability. Additionally, silicon's higher electronegativity contributes to its stability, as it forms stronger bonds with other elements. Consequently, silicon exhibits greater thermal and chemical resistance compared to germanium.
The temperature sensitivity of silicon is less than germanium because silicon has a wider energy band gap than germanium. This wider band gap allows silicon to operate more efficiently at higher temperatures, resulting in less temperature-dependent changes in its electrical properties compared to germanium. Additionally, silicon has a higher thermal conductivity than germanium, which helps dissipate heat more effectively, reducing temperature effects on its performance.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
Silicon has a larger band gap energy than germanium, resulting in a higher cut-in voltage for silicon diodes compared to germanium diodes. The larger band gap in silicon means that it requires more energy for electrons to be excited into the conduction band, resulting in a higher cut-in voltage.
products made by silicon are more stable than those made by germanium
Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.
Germanium has a smaller band gap compared to silicon, allowing it to conduct electricity more effectively. Its crystal structure also has a closer packing arrangement of atoms compared to silicon, making it more metallic in nature. Overall, these factors contribute to germanium exhibiting more metallic properties than silicon.
Silicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.
Silicon is more abundant than germanium and can operate at higher temperatures, making it more suitable for a wider range of applications. Additionally, silicon has a higher bandgap energy, which results in lower leakage currents and allows for greater integration density in electronic devices.
Silicon has a higher operating temperature and better thermal stability compared to germanium, making it more reliable for electronic devices. Additionally, silicon's oxide layer forms a better insulating material for integrated circuits, enhancing its performance. Silicon also has a wider bandgap than germanium, allowing for better control of electrical conduction.
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.
Silicon is a more popular semiconductor than germanium due to factors such as its wider band gap, higher thermal stability, and better abundance in nature. Silicon also has better manufacturing processes and can operate at higher temperatures, making it more suitable for a wide range of electronic applications.
Silicon has a higher operating temperature and greater thermal stability compared to germanium. Silicon has a larger bandgap energy which makes it better suited for high-power applications. Germanium has a higher electron mobility which can result in faster transistors, but it is less commonly used in modern semiconductor devices.