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Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon.

So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced.

Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium.

You may refer to Electronic Devices and Circuits by Allen Mottershead

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Zain Ijaz

UCTI, Malaysia

Mechatronic Engineer.

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14y ago

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