Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon.
So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced.
Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium.
You may refer to Electronic Devices and Circuits by Allen Mottershead
Regards,
Zain Ijaz
UCTI, Malaysia
Mechatronic Engineer.
A: a silicon diode has better temperature coefficient higher breakdown voltage higher current capability and low leakage. a germanium diode however does have a lower forward voltage drop.
because lekage current of silicon is less than germenium
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
silicon is less sensitive towards temperature.It costs low compared to germanium,
A: Because the element has different property as gallium arsenide.
The class of materials that make up transistors is "semiconductor." A transistor is often made from very pure silicon that is doped with germanium or other dopant to change its electrical properties.
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.
Because the space charge region or depletion region is small in germanium compared to silicon hence leakage current is more in germanium than silicon
the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)
because lekage current of silicon is less than germenium
Property Germanium silicon Depletion layer 0.15V 0.6V Forward Current milli amperes tens of amperes Reverse leakage micro amperes nano metres Current
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
Germanium diodes are more expensive than silicon ones, germanium is harder to process, germanium cannot be used to make integrated circuits (while early prototype integrated circuits were germanium the wiring between the integrated components cannot be integrated making it too expensive for production), germanium cannot operate with a junction temperature above 60C (silicon will operate up to 150C), and its reverse leakage current is greater. However! Germanium diodes have a lower forward voltage drop than silicon ones do, so they're better for some applications, like radio frequency detection.
Germanium is not used in integrated circuits. Silicon is.
The metalloids are Boron, Silicon, Germanium, Arsenic, Antimony, Tellurium, and Polonium.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
Silicon and Germanium are the elements used in transistors