Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon.
So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced.
Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium.
You may refer to Electronic Devices and Circuits by Allen Mottershead
Regards,
Zain Ijaz
UCTI, Malaysia
Mechatronic Engineer.
because lekage current of silicon is less than germenium
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
silicon is less sensitive towards temperature.It costs low compared to germanium,
Oh, dude, like, a good slogan for germanium could be "Germanium: It's like silicon's cool cousin." Because, you know, germanium is in the same family as silicon, but it's not as popular. So, it's like the hipster of the periodic table.
A: Because the element has different property as gallium arsenide.
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)
because lekage current of silicon is less than germenium
Property Germanium silicon Depletion layer 0.15V 0.6V Forward Current milli amperes tens of amperes Reverse leakage micro amperes nano metres Current
Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
Germanium is not used in integrated circuits. Silicon is.