it is the collector voltage multiplied by the sum of all the currents.
bjt is bipolar device cmos is from mos family and its unipolarbjt is current control devicecmos is voltage control devicebjt is used for high current applicationcmos is used for high voltagebjt has not high input impedancecmos has high input impedacebjt has some what more static power consumptioncmos has zero static power consumption prominient advantage
Disadvantage:Easy to damage when compared to BJT
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
it is an oscillator
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio-frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951.
It depends on the exact part numbers, but power devices are typically slower. There are, of course, RF power transistors, so you have to compare apples with apples.
sweater fabric consumption formula
Yes
neither is better, it depends on purpose
Assuming a constant power:(energy consumption) = power x time In SI units: joules = watt x seconds Of course, if the power is not constant, you need to replace the formula by an integral.
I want to get the knit garments consumption formula woven garments consumption formula
consumption
bjt is bipolar device cmos is from mos family and its unipolarbjt is current control devicecmos is voltage control devicebjt is used for high current applicationcmos is used for high voltagebjt has not high input impedancecmos has high input impedacebjt has some what more static power consumptioncmos has zero static power consumption prominient advantage
How will get Sweater yarn consumption & price quotation formula?
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
Bjt is bipolar because in bjt the conduction of current is due to the electrons as well as holes
The difference between consumption and consumption function is that the consumption function is a formula that measures consumer spending.