We can determine which are the emitter and collector of an NPN transistor because the base-emitter junction is forward biased while the base collector junction is reverse biased.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
To know if a transistor is PNP or an NPN,the following should be verified:For a PNP transistor, the base-collector junction is forward biased while the base-emitter junction is reversed biased.For an NPN transistor, the base-emitter junction is forward biased while the base -collector junction is reversed biased.
For a bipolar junction transistor: * Emitter * Collector * Base For a field-effect transistor: * Drain * Source * Gate
A circuit in which the input signal is applied to its base and the collector is earthed (grounded) is known as common collector configuration of BJT (BiPolar Junction Transistor)
Assuming you mean a bipolar junction transistor (BJT): 1. Reverse bias on the collector-base junction. 2. Forward bias on the base-emitter junction, that is 3. Sufficient to give the correct operating point of collector voltage/collector current.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Base-Emitter CurrentCollector-Emitter CurrentBase-Collector Current
Type your answer here... to properly bias the junction for current flow thru the transistor. The voltage potential must be different on the base than the collector
Transistor operates as a switch by providing minute forward bias voltage or no voltage between base emitter junction. If forward bias is zero volts; transistor collector current becomes zero or collector impedance becomes infinite. By applying minute forward bias voltage at base emitter junction, collector current flows in terms of amps. This is how transistor works as a switch.
a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
By design. The whole IDEA of this type of transistor is for one current to control another one - thus, the transistor can be considered to be a type of amplifier, and it can indeed be used in amplifier circuits.
The characteristic of NPN transistors is :The base-emitter junction is reversed biased.The base-collector junction is forward biased.
Two junctions namely emitter-base junction and collector-base junction separates regions in a transistor.
A transistor is, from a modeling standpoint, a controllable diode. The forward conduction curve of the collector-emitter junction is a function of the base-emitter current. (This assumes we are talking about the common bipolar junction transistor, or BJT.) Theoretically, then, you could use a transistor as a controllable rectifier. If you drive the base into saturation, then you could "think" of the collector-emitter as a diode.However, the collector-emitter junction voltage drop is not the same as a true diode, as efficiency and power dissipation would be different than for a diode. It comes down to what you want to do.
The question is poorly phrased and needs a grammatical cleanup. If you mean to ask "what happens to the collector-emitter current of a transistor when the emitter-base junction is reverse biased" then the answer is that the transistor will turn off, and you will only see leakage current.
In a transistor for normal operation , emitter base junction is forward biased and collector base junction is reverse biased.
Transistor is known as bipolar junction becoz it has 2 pole. Input is given to the 2 junction and output is taken from to junction
Emitter-Base junction should be forward biased.Collector-Base junction should be reverse biased.
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
Because most of the heat buildup occurs in the reverse biased collector-base junction where Ic = Ie + Ib flows.
it is a bipolar junction transistor having p-type emitter & collector terminal and , n-type base terminal .
For the identification of the transistor leads when you were only given with a resistance measuring device follow this procedure.as we know that irrespective of the first and the third leads the middle one always represents base. now measure resistance between 1-2 and 2-3 (say a and b)we know that for any transistor the emitter -base junction is forward biased and the base-collector junction is reverse biased. So, we can conclude that emitter-base junction has a very low forward resistance when compared to the large values of collector base junction.so if ,a>b --- 1-collector, 2-base, 3-emittera
The emitter-base junction must be forward biased, and the collector-base junction must be reverse biased.