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What is the temperature of germanium diode compare to silicon diode?
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What is the difference of silicon diode and germanium diode?
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
What is the difference between a silicon diode and a germanium diode?
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
What parameter in a germanium diode differs from those in a silicon diode?
germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,
What is the difference between a silicon diode and germanium diode?
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
What is the typical value of the barrier potential for a germanium diode?
0.3v as opposed to the silicon 0.6v
What is more referred to use si diode or a ge diode?
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
Compare the characteristics of a silicon and germanium diode?
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
Is 1N4007 OA79 silicon or germanium diode?
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
What is the difference of silicon diode and germanium diode?
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
What is the difference between a silicon diode and a germanium diode?
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
What parameter in a germanium diode differs from those in a silicon diode?
germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,
What is a substitute for a germanium diode?
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
What is the difference between a silicon diode and germanium diode?
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
What type of diode is proper to used silicon and germanium?
A: They both have redeemable quality. Germanium has lower turn on voltage as compared to silicon however their current capability is not too great and also have a problem leaking with temperature. SO THE USE IS DEPENDENT ON APPLICATIONS
What is the typical value of the barrier potential for a germanium diode?
0.3v as opposed to the silicon 0.6v
How will differentiate silicon and germanium diode from a group of diodes?
Simple, Use the multi-meter , switch to the diode option then connect the positive wire to the positive of diode n negative to the negative ( +ve wire red, -ve wire black) if the there is a reading of =~0.7V then it is silicon. and if it is =~ 0.3V then it is germanium.
Why is the reverse saturation current of germanium diode more than silicon?
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.
