I=I0 (exp(V/(ita)VT -1)
No, the voltage across a silicon PN junction diode does not depend exponentially on the current through the diode. The relationship between voltage and current in a PN junction diode is described by the diode equation, which is an exponential relationship between current and the voltage across the diode. However, this relationship depends on factors such as the temperature and doping levels of the diode, in addition to the material used.
It is depend on your requirement .suppose you need a voltage regulator of 5V than you need 5V Zener diode.
When a diode passes from forward biased to reverse biased it takes a short period of time for the charge carriers in the vicinity of the junction to recombine and create a nonconducting depletion region. During this time period the diode conducts in the reverse direction, this is called the reverse recovery time. Its different for every kind of diode, to get the value for a specific diode consult the datasheet.
you should specify: - circuit topology, I assume a series connection. - diode allows current flow? It depends how it's connected - diode forward voltage drop value if diode is in forward conduction, you have VR=10V - VDIODE and, thus, I = VR/R=(10-Vdiode)/1200.
I=I0 (exp(V/(ita)VT -1)
Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode
The equation relating diode voltage and current is: Id = Is*(exp(Vd / n*Vt) - 1) Where: Id = Diode current Is = Saturation current exp() = exponential function (e^) n = Ideality factor Vt = Thermal voltage The relationship between temperature and diode voltage comes from this Vt, the Thermal voltage, which is defined as: Vt = k*T / q Where k = Boltzmann constant (8.617 * 10^−5 eV/K) T = Temperature in Kelvin q = Elemental charge (1.602 * 10^−19 C) Thus, the temperature affects the thermal voltage (an electrostatic voltage across the PN junction), which affects the diode's Id and Vd properties.
It is an equation that describes the I-V characteristic of a diode. In other words, how the current depends on the voltage.The Shockley diode equation uses an exponential expression. See the Wikipedia article on "Shockley diode equation" for more details. However, for many practical purposes, it's accurate enough to think of a diode as being "open" in the "forward" direction (no voltage drop), and having a voltage drop of about 0.7 V (in the case of diodes made from silicon) in the "reverse" direction.
It is an equation that describes the I-V characteristic of a diode. In other words, how the current depends on the voltage.The Shockley diode equation uses an exponential expression. See the Wikipedia article on "Shockley diode equation" for more details. However, for many practical purposes, it's accurate enough to think of a diode as being "open" in the "forward" direction (no voltage drop), and having a voltage drop of about 0.7 V (in the case of diodes made from silicon) in the "reverse" direction.
The ac resistance of a diode is found using the equation: (The change in Vd)/(The change in Id) An easier was is to use the Equation: 26mV / Id. This is a general form as the ac resistance of a diode change as the temperature changes.
the current which has negative value n passes through the diode is called as diode reverse current
The incremental resistance of a diode is the inverse of the slope of the V-I curve at the operating point.
No, the voltage across a silicon PN junction diode does not depend exponentially on the current through the diode. The relationship between voltage and current in a PN junction diode is described by the diode equation, which is an exponential relationship between current and the voltage across the diode. However, this relationship depends on factors such as the temperature and doping levels of the diode, in addition to the material used.
It depends on the particular diode. They come in all different values.
If this value a satisfy the equation, then a is a solution for that equation. ( or we can say that for the value a the equation is true)
The zener diode is optimized for reverse breakdown voltage accuracy and stability. This value and its tolerance is specified in more detail than a normal diode.