p-type
Oxygen is produced as a by-product while energy carriers, NADPH and ATP, are produced for the next step in the process, the Calvin cycle.
NADP+, ADP, and glucose
The majority of the sulfur produced today is obtained from underground deposits, usually found in conjunction with salt deposits, with a process known as the Frasch process.
The Polymerization process .
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The majority carrier in p-type semiconductor is the hole. Electron carriers in p-type semiconductor are minority carriers. Minority carriers in any semiconductor are produced mainly by heat. Only at absolute zero temperature would there be no minority carriers.
In semiconductor devices there are two types of charge carriers: electrons and holes. In N-type doped semiconductor the majority charge carriers are electrons and the minority charge carriers are holes. In P-type doped semiconductor the majority charge carriers are holes and the minority charge carriers are electrons.Some kinds of semiconductor devices operate using minority charge carriers in part(s) of their structure. The common bipolar junction transistor is one of these, they are sensitive to a phenomenon called thermal runaway because additional minority carriers are produced as temperature increases. (field effect transistors however operate using only majority carriers and are thus not sensitive to thermal runaway)
In an N-type semiconductor, majority current carriers are electrons, while minority current carriers are holes. In a P-type semiconductor, majority current carriers are holes, while minority current carriers are electrons.
Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
Bipolar dc involves both majority carrier and minority carriers for conduction while unipolar requires only majority carriers or minority carriers during conduction. point of view based on electronics devices.
due to minority carriers
The p-region of a diode contains an abundance of holes, but also contains a small percentage of electrons. Similarly, the n-region also contains a small percentage of holes. These are knows as the minority carriers. Again, like charges repel, so when the diode is reverse biased, these minority carriers will migrate toward the boundary region. The minority carriers will recombine at the boundary region, and thus enable an electric current. Because these carriers are few in number (orders of magnitude less than the majority carriers), this current is very small. This represents the leakage current of a diode. The mobility of minority carriers increases with temperature, and heating a diode will cause greater numbers of minority carriers to congregate at the boundary region. This will increase leakage current. Surface contamination on the diode may also allow small amounts of electricity to be conducted, again causing leakage.
bipolar devices use both majority and minority current carriersunipolar devices use only majority current carriers
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
there excess carriers can dominate the conduction process in semiconductor material.
The main reason for produce reverse current in a diode is "MINORITY CARRIERS". For reverse bias diode i.e negative terminal connected to p side and positive to n side the electrons in p side(minority charge carriers) attracted towards the positive polarity i.e towards positive terminal. Hence the current (reverse saturation) flows.Holes also contributed the current by attracting towards negative side.
The P-type semiconductors have a very large percentage of holes.