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What type of transistor is a JFET?

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Answered 2010-11-30 03:51:51

JFET is a unijunction transistor.

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A Jfet stands for junction field effect transistor. It is a transistor also known for being the simpleist field effect transistor. The basic construction contains has three parts the P-type input the n-type input and a depletion layer.


Its a Transistor used in JFET (Junction Field Effect Transistor)


JFET = junction field-effect transistor. The transistor design is to restrict/control the current in the channel by expanding or contracting the depletion region, hence the channel cross-section, with a gate signal. The gate is the junction in JFET, compared with using oxide in an MOSFET.


It can be either a Bipolar Junction Transistor (NPN or PNP) or a Field Effect Transistor (N channel JFET, P channel JFET, N channel MOSFET, or P channel MOSFET).


The mobility of N type charge current carriers is more than two times greater than the mobility of P type charge carriers . Resulting in faster transistor operating speed .


There are two basic types of FETs- i. Junction field effect transister(JFET), ii. MOSFET(Metal oxide semiconductor FET). Generally JFET consists of a p-type or n-type silicon bar containing two pn junctions. If the bar is n-type then it is called a n-channel JFET and if bar is p type then it is called p-channel JFET. It have 3 terminals named Gate, Source & Drain.


its a n channel jfet(field effect transistor) manufactured by Motorola


Junction Field Effect Transistor are classified as hi impedance devices


its a n channel jfet(field effect transistor) manufactured by Motorola


Because the insulation between the gate and the channel is only a reverse biased PN junction. If this junction were to become forward biased the jfet would no longer operate as a transistor at those times.


A: A FET has a very hi impedance it requires mostly potential as opposed to current like a transistor does,


1.MOSFET stands for Multi oxide semiconductor field effect transistor, whereas JFET stands for Junction field effect transistor. 2.The gate of a Junction Field Effect Transistor consists of a reverse-biased junction, whereas the gate of a Metal Oxide Semiconductor Field Effect Transistor consists of a metal electrode insulted by metal oxide from a semiconductor channel. 3.JFET has high Trans-conductance as compare to MOSFET. 4.MOSFET has reverse body diode but JFET has no reverse body diode. 5.JFET is better for low noise applications, low capacitance and high resistance input.In case of MOSFET,it is good for High noise application, switching application etc.


The Junction Field Effect Transistor (JFET)exhibits characteristics which often make it more suited to a particular application than the bipolar transistor. Some of these applications are: - High Input Impedance Amplifier - Low-Noise Amplifier - Differential Amplifier - Constant Current Source - Analogue Switch or Gate - Voltage Controlled Resistor


Junction field-effect transistor (JFET) is a type of transistor (single-carrier-type) that relies on an EMF applied across the Gate and Source to control the conductivity of a channel (flow of electron holes) usually developed between terminals called Source and Drain. This device when influenced by a Gate potential EMF will cause electron flow from the source terminal towards the drain terminal. The channel of any FET maintains a process of doping which will produce either an N-type or a P-type channel. For example an N- type depletion-mode JFET requires a negative gate-to-source voltage which causes the depletion region to expand thus narrowing the channel. In an N-type enhancement-mode JFET a positive gate-to-source voltage is necessary to create a conductive channel since it does not exist.


A Mosfet is a (spelled down): Metal Oxide Semiconductor Field Effect Transistor A power transistor could be a power mosfet, but a power mosfet is not the only option for power transistor - you could use a BJT, JFET, etc.


A JFET is the basic type of FET. In an ordinary transistor, the junction between the base and the collector is essentially a reverse biased diode. However when charge carriers (electrons or holes) are injected by the emitter, the diode conducts. In a JFET, a piece of doped semiconductor material is allowed to conduct from one end (the source) to the other (the drain). An insulated electrode is placed VERY close to the semiconductor material, so that voltages on that electrode can push the holes or electrons away capacitively, thus narrowing the conductive channel, and raising it's resistance. There are P channel and N channel JFETs, intended to operate on positive or negative supply coltages.


A Jfet works by applying voltage to the drain of the jfet. A jfet will then conduct across from drain to source.


MOSFET has high input impedance in comparisson with JFET due to the insulation material of silicon dioxide


FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.


A transistor (bipolar junction transistor BJT) will only conduct in ONE DIRECTION. And the voltage drop is not Ohmic - it is *NOT* strictly related to current flow. If you're referring to a Field-Effect Transitor (JFET, IGFET, MOSFET, etc), then the device may be able to be used in a bidirectional circuit. But the question stated "transistor", which is understood to be a BJT.


It's a junction gate field effect transistor that has it's bandwidth tuned to operate (amplify) in the radio frequency range.


A VHF/UHF N-Channel JFET made by motorola.


The structure of a UJT is quite similar to that of an N-channel JFET. The main difference is that P-type (gate) material surrounds the N-type (channel) material in case of JFET and the gate surface of the JFET is much larger than emitter junction of UJT.


By choosing the type of transistor to meet your needs carefully. I assume what you're trying to do is feed beyond the ttl output's power capability? a JFET may be a good option. A simple amplifier circuit using a MOSFET may be all you need, and this might be more readily available.


• High Input Impedance Amplifier. • Low-Noise Amplifier. • Differential Amplifier. • Constant Current Source. • Analog Switch or Gate. • Voltage Controlled Resistor. • JFET as a Switch • JFET as a Chopper • JFET as a Current source • JFET as a Amplifier • JFET as a Buffer



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