Field-effect transistors were invented by Julius Edgar Lilienfeld in 1925 and by Oskar Heil in 1934, but practical devices were not able to be made until 1952 (the JFET). The MOSFET, which largely superseded the JFET and had a more profound effect on electronic development, was first proposed by Dawon Kahng in 1960.
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The Bipolar Junction Transistor (BJT) was invented by three scientists, William Shockley, John Bardeen and Walter Brattain, in 1948. They all worked at Bell Labs, and were trying to find something to replace the bulky and heat wasting vacuum tubes. They had been pursuing a Field Effect Transistor (FET) based on copper oxide when they stumbled upon a very different amplifying effect produced by closely-spaced metal contacts touching Germanium semiconductor. They won the Nobel Prize in Physics for their work in 1956. When the Bell Labs scientists continued to investigate a possible FET transistor, they discovered that one of these had already been patented by Physicist J. Edgar Lilienfeld. Lilienfeld's insulated-gate FET (or MOSFET) was based on thin film semiconductor deposited on glass, and was invented over 25 years before the BJT, in the early 1920s. Transistor History http://nobelprize.org/educational_games/physics/transistor/history/ The Transistor Museum http://semiconductormuseum.com/Museum_Index.htm Lilienfeld transistor history http://chem.ch.huji.ac.il/history/lilienfeld.htm William Shockley, Walter Brattain, John Bardeen
December 16, 1947
The transistor was invented by Bell Labs in 1948. Applications in consumer devices followed within a few years after that.
bell laboratory in 1947-1948
Field Effect Transistor (FET) was invented in 1926 by Julius E. Lilienfeld.
MOSFET is Metal Oxide Semiconductor Field Effect Transistor. IGFET Insulated Gate Field Effect Transistor. But these expressions are practically synonyms.
Field Effect Transistor A: basically a silicon bar where the conduction is controlled by a field since there is no connection to the gate the impedance is very high
Its a Transistor used in JFET (Junction Field Effect Transistor)
The transistor was created by researchers at the university of Geneva. "The first patent for a field-effect transistor principle was filed in Canada... 1925. In 1934 German physicist Dr. Oskar Heil patented another field-effect transistor."
0.7V
There are two types of field effect transistors:junction field effect transistors andmetal-oxide semiconductor field effect transistors.
Metal Oxide Semiconductor Field Effect Transistor
FET stands for field-effect transistor.
Thermionic valve
metal oxide semiconductor field effect transistor
we do bias field effect transistor because FET works if its Q point lies into active reason .If we bias FET ,the Q point lies in active reason