When a transistor is saturated the collector current is maximum.?

What is the current gain value of BC 148 transistor?

The hFe (current gain) on the BC148 ranges from a minimum value of 20 to 100, depending on collector current, with a maximum value of 300.

What is the Maximum current can be used for transistor 7812?

1.5A

When is the collector current maximum?

The maximum collector current is normally rated to be the current at which the DC current gain (hFE) falls to 50% of its maximum value. The maximum peak current is Page 2 Operation notes Transistors Rev.A 2/7 rated at a value which ensures reliability within the maximum allowed junction temperature.

Difference between bipolar and unipolar electronic devices?

Technical notes and FAQ on bipolar junction transistors (BJT) : - What is the difference between bipolar and unipolar devices ?Bipolar transistors can have both minority and majority carriers flowing, whereas FET's only have majority carriers flowing. The fact that bipolar transistors have two types of carriers flowing simultaneously results in the name 'bi-polar'. The monirity carrier flow is responsible for collector conduction modulation and transistor storage time. -Why is a bipolar transistor current driven and a FET voltage driven ?A FET has a gate that is either insultaed physically (MOSFET) or by a reverse biased junction (JFET). Hence no current is flowing through the gate. A bipolar transistor has the base electrically connected and needs base current to turn on. - How does a bipolar transistor (BJT) work ?A BJT (NPN) will turn on by base current. For a positive base current, electrons will be drawn from the emitter into the base area.. Most of the electrons that are drawn from emitter into base area will be cought by the collector. For every electron that is taken from the base terminal, several electrons will reach the collector terminal. This is the multiplication effect, or current gain. The BJT is a current amplifier. The BJT has 4 modes of operation :1) Cutoff mode : the base voltage is below threshold (0.4-0.7V for Si) so no collector current is flowing. The base-collector juction is reverse biased, and the collector voltage is blocked with no collector current flowing.2) Linear mode : the collector-base junction is reverse biased, and the base-emitter junction is forward biased. Electrons are injected into the reverse-biased base-collector junction, constituting a collector current which is a multiple of the base current. The collector current is more or less independent from the collector voltage.3) Quasi Saturation : the base-collector junction becomes forward biased. This can appear even if the collector voltage is still higher than the base voltage because of conduction losses in the collector area. In this mode minority carriers will be injected into the collector area though the forward biased base-collector junction. These minority carriers will generate an electron-hole plasma effectively lowering the collector resistance. It is this lowered collector resistance that will offer BJT's a benefit over unipolar devices in switching applications.4) Saturation : the base-collector junction is forward biased and increasing the base current will no longer lower the collector resistance. - What does the SOA define ?The SOA (Safe Operating Area) defines the permissible region of operation for linear applications. The circuit designer must make sure the transistor is never used outside the SOA boundaries. The SOA defines 4 important boundaries :1) Maximum collector current : this is the maximum continuous current the bonding wires and the transistor metallization can take without damage. Higher peak current is possible. Check the datasheet for peak current values.2) Maximum power : this is the maximum power the transistor can dissipate, usually at case temperature of 25°C. To hold the case temperature to 25°C at maximum power the transistor must be perfectly mounted on an almost infinite cooling fin. Since cooling fins have a limited size and thus have their own thermal resistance, te maximum power must be derated according to the cooling capabilities. Higher power levels can be tolerated for short periods (<100ms) and sometimes the SOA defines peak power for short intervals.3) Second breakdown : this is the maximum power the transistor can dissipate at higher voltage levels. The second breakdown limit is independent from junction temperature. Exceeding the second breakdown boundary is immediately destructive. Sometimes the SOA defines higher power levels for short periods.4) Maximum collector voltage : this is the maximum voltage the collector will sustain. Exceeding this level may result is first breakdown or avalanche breakdown. - What is the FBSOA ?FBSOA = forward biased safe operating area. This is the same as the normal SOA for linear transistors, and this is the SOA to be used for swichting transistors when the base is turned on. - What is RBSOA ?RBSOA = reverse biased safe operating area. This does not apply to linear and general purpose transistors. This SOA is to be used for switching transistors when the base is turned off. - What is the difference between a general purpose, linear, HF and a switching transistor ?General purpose and linear transistors can be used for amplifier and slow switch applications.HF transistors are constructed differently and are suitable only for HF/Video amplifier or oscillator apllications.Switching transistors are designed to switch as fast as possible and are sometimes constructed to withstand switching inductive loads.Important : do NOT attempt to switch large inductive loads (even if these are clamped) with any other device than a switching transistor.Make sure that all SOA conditions are satisfied while the inductive load is switched off ! - How critical is the maximum current limit ?The maximum current limit defines the highest safe current level for the tranistor metallization and the bonding wires, wither for continuous and peak current.Theoretically the transistor can be operated safe near the maximum current limit, but practically it is not advisable to do so, because in that case no margin is left for error and because at the highest current levels the current gain will be poor. If the transistor is to be operated near maximum Ic, then it is wise to select a device with a higher current rating wich will show more linear operation at the same current level. - How critical is the maximum power limit ?The maximum power limit will define operation at maximum junction temperature and 25°C junction temperature. Maximum junction temperature is usually 150°C, and the maximum power = (150-25)/package termal resistance. Please note that in reality the thermal resistance of the cooling fin has to be taken into account, as well as the thermal resistance of the mounting compound, and that the maximum ambient temperature that has to be taken into account is normally higher than 25°C. The resulting maximum power level will thus be lower than the ideal value specified in the datasheet and will depend on the actual transistor mounting.. If maximum power is exceeded, the junction temperature may exceed its maximum value. - How critcal is the maximum junction temperature ?Most BJT's are specified at Tj max = 150°C. The reason for this is that above this temperature the collector leakage current will become significant and the transistor will not be usable. Maximum junction temperature can be momentarily exceeded without destroying the transistor. A BJT will shortly withstand temperatures of 200-250°C. However, for reliable operation is not advised to allow the maximum junction temperature to be exceeded. As high temperatures promote device aging, it is discouraged to operate the transistor continuously near maximum temperature if reliable long life is to be archieved. - How large is the real leakage current ?Most transistors show a very small leakage current at low temperatures, in the order of nA. As the leakage current rises exponentially with rising temperature, collector leakage current may be substantial at Tmax. Therefore the highest possible leakage current should be taken into account when designing a circuit. - What is the tolerance on the breakdown voltage ?All transistors are designed to go into avalance breakdown at a voltage that is above spec. Usually there is a margin of 10-20%. Breakdown voltage is not temperature dependent. True breakdown voltage may vary slightlty from one transistor to another. - What happens when a transistor goes into avalanche breakdown ?When a transistor goes into avalanche breakdown with open base (Vceo) and the collector current is limited, the transistor will survive. Check a datasheet, and spot the testing conditions for Vceo. Usually this is done by injecting a small current (usually 30mA) into the collector and allowing the transistor to clamp the collector voltage. Although this mode is not allowed for safe operation, a transistor will normally sustain the stated collector current at Vceo breakdown.When a transistor goes into avalanche breakdown with open emitter (Vcbo) OS with shorted base (Vces) then this will happen at a much higher value than Vceo, whatever the rating in the datasheet. Usually avalanche breakdown at Vcbo will happen at approximately twice the collector voltage of Vceo. Only a very small collector current is needed to destroy the transistor at Vcbo breakdown condition. A current of several mA may destruct the biggest power transistor when Vcbo is exceeded. - What is the difference between VCEO, VCER and VCBO ?VCEO = breakdown voltage with open baseVCER = breakdown voltage with base-emitter resistor (value to be specifiied in ohm)VCBO = breakdown voltage with open emitter or shorted base.Basically VCBO will have the highest value, because it is the avalanche breakdown voltage of the reverse biased base-collector junction.With VCEO, the base terminal is open and the current that is leaked through the base-collector reverse biased junction is amplified in the transistor itself, thereby increasing the leakage current to high levels at a voltage much lower than the actual avalanche breakdown voltage of the base-collector junction itself. Generally when the current gain is higher then the VCEO breakdown level will be lower.With VCER, a resistor is placed between base and emitter, evacuating collector leakage current from the base. All collector leakage that is take from the base cannnot be amplified in the transistor and cannot contribute in lowering the breakdown voltage level. If Rb=0, then VCER = VCBO. If Rb=infinte, then VCER=VCEO. Practical exanple :VCEO = 120V VCER= 150V (200ohm)VCBO = 275V HFE= 100 - How critical is the 2nd breakdown boundary ?The 2nd breakdown limit is not to be exceeded under any circumstance. If a transistor goes into 2nd breakdown it will be destructed immediately. It is up to the curcuit designer to make sure a 2nd breakdown condition cannot appear. Special care is to be used in switching applications with inductive loads. - What mechanism initiates forward bias 2nd breakdown ?Second breakdown is a phonomenon that occurs in BJT's and not in unipolar devices. You may consider a BJT chip to be an infinite number of BJT's connected in parallel. The temperature coefficient of the base-emitter voltage is -2.3mV/K. If any hot spot occurs on the transistor die, Vbe will be lowered at that spot and HFE will increase, leading to a larger Ic at that spot and hence further heating. At low collector voltage and high collector current this unstability is corrected by feedback from the built-in emitter resistance. If the transistor draws locally more current then the emitter voltage will increase, drastically reducing the base current and collector current at that spot. At high collector voltage this feedback will not work since for the same amount of power less current is required, and less emitter feedback voltage is developed. Therefore maximum device dissipation must be reduced at higher collector voltages. The mechanism of 2nd breakdown is basically temperature independent. When a hot spot develops on the transistor die, all power will concentrate immediately (within milliseconds) in one point and local temperature will be so high that device destruction follows immediately. A transistor that has been in 2nd breakdown will exhibit very large leakage currents and will no longer sustain maximum collector voltage. - What mechanism initiates reverse bias 2nd breakdown ?With the base reverse biased the collecor will not draw current in its linear mode, so the source of breakdown is totally different : reverse bias 2nd breakdown occurs only in switching applications where a transistor is switched off while the collector current is still flowing. If a transistor is switched off then the collector will continue to draw current until the storage time and fall time have elapsed. During turn-off excess minority carriers are either recombined or drawn from the base by negative base current. The withdrawal of minority carriers will never be evenly spread leading to local variations in collector conductivity which may lead to hot spots. Charge stored in the base may turn into a mesoplasma forcing the transistor to conduct at that spot. - Is there a maximum base and emitter current ?Yes. The maximum base current is specified in the maximum ratings. Sometimes a peak value is also specified. The maximum base current is according to the level that the die metal and bonding wires can tolerate. The maximum emitter current is simply the maximum base current plus the maximum emitter current. - Can the base be driven negatevely ?Yes, but there is a maximum level that should not be exceeded. The maximum negative base-emitter voltage can be found in the maximum ratings table. Exceeding this value will not immediately destroy the transistor if base current is held to a moderate value, but repeated avalanche base-emitter reverse breakdown may lead to shifts of dopants altering the characteristics of the transistor. In case the transistor base can be driven negatively, make sure the reverse base-emitter voltage is not exceeded, and if there is a risk that this may occur, make sure that the negative voltage is clamped by a protection circuit so that it is not the transistor itself that will need to clamp the negative voltage. - What is the maximum negative base current, and what is it used for ?A transistor with zero base voltage or a negative base voltage will be in cut-off mode. In switching applications the transistor will turn off when it enters cutoff mode. In case the base current is zero during turn off, the transistor will stop conduction by recombination of minority carriers. This may take up to 10µs or so. If the transistor needs to be switched off faster, these carriers can be drawn from the base by applying a negative base voltage. While the transistor is turning off, the base current will be negative. As soon as the transistor is fully off, the negative base current will fall to zero even if the negative drive voltage is sustained.The maximum negative base current is usually equal to the maximum positive base current. - What is the relationship between base drive and switching characteristics ?For most power devices including BJT's, the drive waveform is of utmost importance. For fast turn on, a rapid rise (high di/dt) of base current is required. Turn off for a BJT is more difficult : to avoid long storage times, it is important not to drive the transistor too deep into saturation, meaning that the on-state base current must be chosen carefully. For fast tun-off, charge must be extracted from the base. The RBSOA will depend highly on the negative base current and the risetime of the negative base drive. Therefore poor base drive may lead to high switching losses and to initiation of 2nd breakdown when switching inductive loads. Many switching transistor breakdowns can be related to poor base drive waveforms. - What leakage current is to be expected ?The datasheet will only pubish the maximum leakage current at a given collector voltage. Usually the real transistor leakage current bill be many orders of magnitude lower, but for circuit design the value of the datasheet must be taken into account. Real leakage current may vary between prodcution lots so no typical value can be published. The actual circuit must be designed for the worst possible value. - What is the temperature coëfficiënt of Vbe ?Vbe drops at a rate of 2.3mV/°C - What is the temperature coëfficiënt of the gain factor ?There is no real temperature coëfficiënt of the current gain, but current gain will be higher at higher temperatures. Current gain may double at maximum temperature. - What is the spread of the current gain ?The current gain is very difficult to control exactly in the manufacturing process. The current gain will also vary with changing collector current, dropping significantly at high collector currents, and the current gain is temperature dependent. Therefore each design should take the minimum current gain into account at a given collector current only. Also note that the current gain may drop at very low base currents. This is because there is always some base to emitter resistance on the transitor chip. Although this resistance is very high, it will lead to leaking base current and thus a lower current gain. - What is the typical current gain ?The current gain is a parameter that varies with temperature, collector current and between production lots. Graphically a typical current gain is published for convenience, but for actual circuit design the minimum values that are published in the datasheet must be taken into account. - What is the early effect ?The early effect is modulation of the base with by the collector voltage. Linear transistors will be designed to minimise this effect, but as a transistor design is always a compomise between various parameters, it cannot be eliminated. When a transistor is driven by a stabel base current and the collector voltage si increased, the increasing electric field over the reverse biased base-collector junction will push the base charge away making the base electrically thinner, thereby increasing current gain. As a result, current gain will always increase a little with increasing collector voltage. - Are there requirements on the base drive circuit ?Absolutely : if the power transistor is to remain in cutoff state, the base to emitter voltage should be held close to zero voltage, or can be slightly negative (up to maximum Veb) The base of the power transistor should normally not be allowed floating or driven by an extreme resistance only, as this will increase collector leakake current. When the transistor is to be driven into saturation, the base drive circuit should supply enough base current to ensure the transistor is saturated. Otherwise Vcesat may not be met, resulting in improper circuit operation and high power dissipation. When the power transistor is switched fast, beware that the drive circuit needs to withdraw the base charge in order to allow the transistor to turn off in short time. This will require negative base current drive capability. Failure to do this in a consistent way may result to 2nd breakdown failure in smps or timebase circuits. When the transistor is used in a slow switching application, such as lamp drive, the transistor can be turned off by simply stopping to supply base current. - Can a linear power transistor be used for switching applications ?When switching easy loads at low speed, yes. But for fast switching of inductive loads at high power the transistor needs to have a wide RBSOA, which is found only in specially designed switching transistors. Furthermore, switching transistors have a much better interdigitated gate/emitter structure, and doping profiles are optimised for fast switching. - What is fT ?The transistion frequency is where the current gain of the BJT is reduced to unity. This means that it is the highest frequency at which there is amplifying action. Practival circuits will use the transistor at frequencies well below fT. - What parameters are actually tested in production ?Most of the parameters that are listed in the maximum ratings sheet are tested for each transistor both at the wafer level and after packaging.The values that are production tested are :- Collector breakdown voltage.- Collector leakage current.- Current gain at specified values.- Collector saturation voltage at specified values, is usually maximum current test at the same time.- Base-emitter voltage at specified values.- Base-emitter leakage.Parameters that are inherent to device design are tested on a few devices per production run :- Maximum power (depends on die size)- 2nd breakdown (test is destructive so production test is not possible, and this phenomenon is dependent on device structure)- Maximum frequency (depends on device design)- AC gain (depends on DC gain which is prodcution tested)- Linearity (depends on technology) - What is Aluminium spiking ?Aluminium spiking is a production error that leads to shorting the base to the emitter, by aluminum reaching though the emitter-base junction. This can also happen to transistors which have been overheated to temperatures more than 400°C. - Why is the real maximum power dissipation lower than the figure in the datasheet ?Because every manufactures publishes the maximum power dissipation in an ideal situation : with an infinite cooling fin at T(mb) = 25°C. In reality the cooling fin will have a finite thermal resistance, an elevated ambient temperature must be taken into account, there will be some thermal resistance between transistor and mounting base and some margin needs to be maintained to maximum junction temperature. By example, a transistor capable of doing 62.5W at Tj=150°C and Tmb=25°C will have a thermal resistance of 2K/W. If the maximum ambient temperature inside the case of the application is expected to be 70°C, and Tj is designed to be 130°C in that case, then T(j-a) = 60°C only. If the cooling fin has a thermal resistance of 1.5K/W and the transistor mounting leaves a thermal resistance of 0.5K/W, then the total thermal resistance will be 2+1.5+0.5=4K/W. Now the maximum power dissipation will be 60K/4K/W=15 Watt only. -Is temperature important toward reliability ?Yes ! Junction temperature and transistor failure are directly related. Although most bipolar transistors are allowed to work up to 150°C, continuous operation at high temperature is not recommended if the circuit needs to be reliable for a long time. Keeping the junction temperature low will also keep the failure rate of the transistors low. Another issue is temperature cyrcling. Fast temperature cycling will lead to stress and damage of the transistor package and will also influence device reliability. -Is reliability dependent on moisture ?Yes ! Water atoms are small (only one oxygen atom surrounded with two very small hydrogen atoms) and diffuse a hundred times as fast though most materials as oxygen or nitrogen (each time two linked atoms). Worse, water vapour can corrode the metal on the die and react with dopants. Therefore operation in high humidity area's should be avoided for all electronic devices. Transistors can be protected using a passivation layer. Normal commercial general purpose transistors do not have such a passivation layer. For ultra reliable operation, transistors can be made with a nitride passivation layer.

What is reason of invertong output of common emitter amplifier?

The output of the common emitter amplifier is inverted because increasing the base-emitter current causes a proportional increase in collector-emitter current. That increase in collector-emitter current pulls the collector towards the emitter, so the voltage on the collector will go down when the biased base voltage goes up, and vice versa. This is the characteristic of the Class A Common Emitter amplifier. Responding to a request for more details... This is for the NPN transistor. It applies to the PNP transistor as well, but directionality of voltage and current increases is reversed in that case. Start with the base-emitter circuit. You have some kind of bias network holding the base at a certain voltage. That voltage represents a certain current, which goes through the base-emitter junction and emitter resistor, if there is one. Typically, you consider that the emitter voltage is less than the base voltage by the amount of one diode junction, or about 0.7 volts. If you were to increase the input voltage, you would cause a corresponding increase in base-emitter current. The transistor has gain, beta-dc or hFe, which is basically the ratio of collector-emitter current over base-emitter current, so the base-emitter current is controlling a larger collector-emitter current. Now, focus on the collector-emitter circuit. You have some kind of resistor in the collector, and you might have some kind of resistor in the emitter. (More on the emitter resistor later.) Think of this circuit as three resistors in series, the collector resistor, the equivalent resistance of the collector-emitter junctions, and the emitter resistor. This also represents a current, one that is being controlled by the base-emitter resistance. Note that the base-emitter current is being added to the collector-emitter current, so the emitter current, by Kirchoff's current law, is the sum of the base and collector currents. Since the gain is relatively high, however, the contribution from the base is generally negligible. (In high power transistor amplifiers, gain is usually low, so base current is not negligible, so we do take it into account.) The crucial factor here is that the collector current is proportional to the base current, in the ratio of beta-dc, or hFe. If, for instance, base current were increased by 1 ma, with an hFe of 200, then the collector current would increase by 200 ma. Well, sort of.... You have to consider the transistor's limits, and you have to consider whether or not you are opereating in linear mode. Limits are easy, just check the specs. Lets look at linear mode... If you attempt to pull more collector current than the collector-emitter circuit would allow, i.e. to make the equivalant collector-emitter resistance go to zero, then the transistor starts operating in saturated mode. In saturated mode, the transistor is acting as a switch, and it is distinctly non-linear. Even if not saturated, the transistor can be poorly linear when operating at the ends of the linear range. This is why any good design includes consideration of linear mode range. You want to operate in the center of the linear range, which simply means that we bias the base to cause the collector to be in the middle of its optimal range, giving maximum linearity. Summarizing so far, we have a transistor that is multiplying its base current by some factor, beta-dc or hFe, causing a proportional collector current. With this viewpoint, the amplifier is non-inverting because increasing base current causes collector current to increase. We call the circuit inverting, however, because we want to think of the collector voltage rather than the collector current. Remember that the transistor has an equivalent resistance. In particular, the collector-emitter resistance changes in response to stimuli on the base. In order for the collector current to increase, the equivalent resistance must decrease. Looking at the collector-emitter circuit, you have a voltage divider, collector resistance at the top, and the sum of equivalent collector-emitter resistance and the emitter resistance at the bottom. It is easy to see that, if the collector current increases, the collector voltage must decrease. That is why we call this an inverting amplifer. Back to the emitter resistor... When we say "common emitter", we mean that the emitter is common and we analyze everything else. You can design and operate this amplifer with no emitter resistor, and that would be a true common (or grounded) emitter configuration. Problem is the circuit will not be stable... First, gain varies amongst transistors, even amongst transistors of identical design. It is common to state that hFe ranges from 80 to 400, as an example. The circuit design must consider this variability. If you want predictable and stable gain, you must compensate for gain variation. You design the circuit for minimum hFe, but you look at what happens with maximum hFe. To make matters worse, the junction voltage at any particular current varies with temperature, sometimes substantially. This means that your beautifully designed circuit is unpredictable when it gets warm, and all circuits that manipulate power, even small amounts of power, get warm. Its all a matter of degree. There are many ways to compensate for gain variations. One of them is to use an emitter resistor. This effectively places a limit on gain by moving the primary factor for gain from the transistor to the circuit. The gain of a common emitter amplifier is hFe. When there is an emitter resistor, however, the gain is collector resistance divided by emitter resistance. If that ratio is less than hFe, then hFe variability will not affect gain.

What is base transport factor?

It is the fraction of minority carriers injected into the base of a BJT that successfully diffuse across the quasineutral width of the base and enter the collector. Ideally, it should be as close to 1 as possible, for maximum amplification. It is usually represented by alpha_T. alpha_T = I_C/I_E, where I_C is collector current, and I_E is emitter current. For an NPN transistor I_C and I_E are electron current, where as for a PNP they are hole currents.

Which is best positive feedback or negative feedback?

Obviously,it depends on the situation. consider a transistor amplifier.To minimize the change in collector current with respect to temperature,collector to base bias is used . This circuit uses a NEGATIVE FEEDBACK in order to compensate the rise in output current with temperature. But in order to achieve maximum gain, the same circuit can use POSITIVE FEEDBACK by connecting the amplified output to the input .

What is description of Bc547 transistor?

BC547is an NPN bi-polar junction transistor. A transistor, stands for transfer of resistance, is commonly used to amplify current. A small current at its base controls a larger current at collector & emitter terminals.BC547is mainly used for amplification and switching purposes. It has a maximum current gain of 800. Its equivalent transistors are BC548 and BC549.The transistor terminals require a fixed DC voltage to operate in the desired region of its characteristic curves. This is known as the biasing. For amplification applications, the transistor is biased such that it is partly on for all input conditions. The input signal at base is amplified and taken at the emitter. BC547 is used in common emitter configuration for amplifiers. The voltage divider is the commonly used biasing mode. For switching applications, transistor is biased so that it remains fully on if there is a signal at its base. In the absence of base signal, it gets completely off.

What is the purpose of transistor?

A transistor has the same purpose(s) as a triode vacuum tube. It allowed dramatic miniaturization and efficiency improvements, especially when it was figured out how to make monolithic integrated circuits containing them.

What is the maximum base thickness in a BJT transistor?

The maximum base thickness in a BJT is dependent on a number of variables and parameters (or call them "constraints"). You could create a base region with thickness ranging from a few layers of atoms up to the point where the "base" region responds to the models of bulk semiconductor by messing with the process parameters. But why? If the base is too thick then with the transistor biased into the 'active' region (i.e., B-E junction forward biased & B-C junction reverse biased), the transistor 'alpha' (the ratio of carriers collected by BC to those generated in BE) will be hopelessly low and the transistor will not exhibit the high current gain that you expect from BJTs. That's because a thick base provides too much opportunity for large numbers of forward current charge carriers to be recaptured by the crystal matrix or lost to the collector current in other ways.

When a transistor is saturated the collector current is maximum.?

Add your answer:

What is reason of invertong output of common emitter amplifier?

Which is best positive feedback or negative feedback?

What is the maximum gate length in a FET transistor?

What is the maximum input voltage that could be used to ensure linear operation of the inverting and noninverting amplifier?

What is output voltage on pin1 of UM66?

What is the current gain value of BC 148 transistor?

What is the Maximum current can be used for transistor 7812?

When is the collector current maximum?

Difference between bipolar and unipolar electronic devices?

How a transistor work as an amplifier and as a switch?

What is reason of invertong output of common emitter amplifier?

What is base transport factor?

Which is best positive feedback or negative feedback?

What is description of Bc547 transistor?

When does a transistor act as a switch?

What is the purpose of transistor?

What is the maximum base thickness in a BJT transistor?

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